A review of ultrawide bandgap materials: properties, synthesis and devices
Ultrawide bandgap (UWBG) materials such as diamond, Ga2O3, hexagonal boron nitride (h-
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …
BN) and AlN, are a new class of semiconductors that possess a wide range of attractive …
Gallium oxide-based optical nonlinear effects and photonics devices
Photonics devices working in the ultraviolet and visible (UV–Vis) spectra have drawn great
attention due to their potential applications in the optical computing, communication, and bio …
attention due to their potential applications in the optical computing, communication, and bio …
Nonlinear nanophotonic devices in the ultraviolet to visible wavelength range
Although the first lasers invented operated in the visible, the first on-chip devices were
optimized for near-infrared (IR) performance driven by demand in telecommunications …
optimized for near-infrared (IR) performance driven by demand in telecommunications …
Continuous Single‐Crystalline GaN Film Grown on WS2‐Glass Wafer
Use of 2D materials as buffer layers has prospects in nitride epitaxy on symmetry
mismatched substrates. However, the control of lattice arrangement via 2D materials at the …
mismatched substrates. However, the control of lattice arrangement via 2D materials at the …
Highly Asymmetric Optical Properties of β-Ga2O3 as Probed by Linear and Nonlinear Optical Excitation Spectroscopy
β-Ga2O3 is a highly promising semiconductor for a deep ultraviolet (UV) emitter owing to its
wide band gap, which significantly varies in the range of 4.49–4.74 eV because of its optical …
wide band gap, which significantly varies in the range of 4.49–4.74 eV because of its optical …
Three-photon absorption and Kerr nonlinearity in pristine and doped β-Ga2O3 single crystals
Y Sun, Z Li, Y Fang, X Wu, W Zhou, Z Jia… - Applied Physics …, 2022 - pubs.aip.org
We report the spectral dependence of the three-photon absorption coefficient γ and third-
order nonlinear refractive index n 2 in pristine, Sn-doped and Fe-doped β-Ga 2 O 3 crystals …
order nonlinear refractive index n 2 in pristine, Sn-doped and Fe-doped β-Ga 2 O 3 crystals …
Wide Bandgap Vertical kV-Class β-Ga₂O₃/GaN Heterojunction pn Power Diodes With Mesa Edge Termination
Breakdown capability of-Ga 2 O 3/GaN heterojunction-based vertical pn power diodes with
mesa edge termination (ET) was comprehensively investigated using TCAD simulation. With …
mesa edge termination (ET) was comprehensively investigated using TCAD simulation. With …
Dispersion of two-photon absorption and nonlinear refraction in β-Ga2O3 from 350 to 515 nm
X Tian, H Lu, T Qian, W Zhou, J Yang, X Yang… - Applied Physics …, 2024 - pubs.aip.org
We report the wavelength dependencies of the two-photon absorption coefficients β as well
as the nonlinear refractive index n 2 of undoped β-Ga 2 O 3 single crystal in the spectral …
as the nonlinear refractive index n 2 of undoped β-Ga 2 O 3 single crystal in the spectral …
[HTML][HTML] Correlation between deep-level defects and functional properties of β-(SnxGa1-x) 2O3 on Si photodetectors
Heterogeneous integration of β-(Sn x Ga 1− x) 2 O 3 (TGO) UV-C photodetectors on silicon
substrates by molecular beam epitaxy is demonstrated. Multimodal electron microscopy and …
substrates by molecular beam epitaxy is demonstrated. Multimodal electron microscopy and …
High Sensitivity Ultraviolet Sensor Based on Gallium Oxide Coated Hollow Core Fiber
F **an, S Lu, L Xu, G Zheng, H Wu, Z Cao… - IEEE Sensors …, 2024 - ieeexplore.ieee.org
A novel solar blind ultraviolet (UV) sensor based on a Ga 2 O 3 thin film coated hollow core
fiber (HCF) is firstly proposed by theoretical and experimental methods. Ga 2 O 3 thin film is …
fiber (HCF) is firstly proposed by theoretical and experimental methods. Ga 2 O 3 thin film is …