This paper reviews the recent experimental findings on the atomic structures on the (001)
surface of GaAs. We systematically studied the structure and composition of the GaAs (001) …

Use and performance criteria of photonic devices increase in various application areas such
as information and communication, lighting, and photovoltaics. In many current and future …

A state-of-the-art overview of high-k dielectric materials for advanced field-effect transistors,
from both a fundamental and a technological viewpoint, summarizing the latest research …

The interactions of oxygen atoms on the GaAs (001)-β 2 (2× 4) surface and the passivation
of oxidized GaAs (001)-β 2 (2× 4) surface were studied by density functional theory. The …

Thin crystalline layers of TaAs Weyl semimetal are grown by molecular beam epitaxy on
GaAs (001) substrates. The (001) planes of the tetragonal TaAs lattice are parallel to the …

Topological insulators (TIs) are known as promising materials for new nanoelectronics and
spintronics applications thanks to their unique physical properties. Among these TIs, bismuth …

Cross-sectional scanning tunneling microscopy (X-STM) was employed to characterize the
InAs submonolayer quantum dots (SMLQDs) grown on top of a Si-doped GaAs (001) …

A grazing incidence fast atom diffraction (GIFAD or FAD) setup, installed on a molecular
beam epitaxy chamber, has been used to characterize the β 2 (2× 4) reconstruction of a …

Bandgap engineering and quantum confinement in semiconductor heterostructures provide
the means to fine‐tune material response to electromagnetic fields and light in a wide range …

The performance of infrared photodetectors based on submonolayer quantum dots was
investigated as a function of the arsenic flux. All the devices showed similar figures of merit …