N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
The study of self-heating and hot-electron effects for AlGaN/GaN double-channel HEMTs
The direct current characteristics of AlGaN/GaN double-channel HEMTs (DC-HEMTs) are
investigated by using 2-D numerical simulations. The output characteristics have been …
investigated by using 2-D numerical simulations. The output characteristics have been …
Low-loss and high-voltage III-nitride transistors for power switching applications
M Kuzuhara, H Tokuda - IEEE Transactions on Electron …, 2014 - ieeexplore.ieee.org
This paper describes recent technological advances on III-nitride-based transistors for
power switching applications. Focuses are placed on the progress toward enhancing the …
power switching applications. Focuses are placed on the progress toward enhancing the …
N-polar III-nitride transistors
This chapter reviews the historical development and present status of N-polar 000 1¯ GaN
high electron mobility transistors (HEMTs) that aim at addressing the device scaling …
high electron mobility transistors (HEMTs) that aim at addressing the device scaling …
Design of High-Aspect-Ratio T-Gates on N-Polar GaN/AlGaN MIS-HEMTs for High
This letter discusses the design of high-aspect-ratio T-gates on molecular beam epitaxy
(MBE)-grown nitrogen-polar (N-polar) GaN/AlGaN metal-insulator-semiconductor high …
(MBE)-grown nitrogen-polar (N-polar) GaN/AlGaN metal-insulator-semiconductor high …
Epitaxial Co on GaN by decomposition of template CoO
N Qiu, W ** layers used for the reduction of ohmic contact and access resistances in inverted …
Scaled Self-Aligned N-Polar GaN/AlGaN MIS-HEMTs With of 275 GHz
In this letter, we demonstrate state-of-the-art performance from N-polar GaN/AlGaN metal-
insulator-semiconductor high-electron-mobility transistors. Self-aligned gate-first process …
insulator-semiconductor high-electron-mobility transistors. Self-aligned gate-first process …
Properties of GaN layers grown on N-face free-standing GaN substrates
X Li, C Hemmingsson, U Forsberg, E Janzén… - Journal of Crystal …, 2015 - Elsevier
GaN layers were homoepitaxially grown on N-face free-standing GaN substrates using a hot-
wall metalorganic chemical vapor deposition method. By using optimized growth …
wall metalorganic chemical vapor deposition method. By using optimized growth …