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Bose–Einstein condensation and indirect excitons: a review
M Combescot, R Combescot… - Reports on Progress in …, 2017 - iopscience.iop.org
We review recent progress on Bose–Einstein condensation (BEC) of semiconductor
excitons. The first part deals with theory, the second part with experiments. This Review is …
excitons. The first part deals with theory, the second part with experiments. This Review is …
DNA-guided lattice remodeling of carbon nanotubes
Covalent modification of carbon nanotubes is a promising strategy for engineering their
electronic structures. However, kee** modification sites in registration with a nanotube …
electronic structures. However, kee** modification sites in registration with a nanotube …
[كتاب][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Porous silicon dielectric multilayers and microcavities
1. Introduction 2. Porous silicon 2" 1. How porous silicon is produced 2" 2. Porous silicon
structure and morphology 2" 3. Porous silicon physical properties 2" 3.1. Luminescence in …
structure and morphology 2" 3. Porous silicon physical properties 2" 3.1. Luminescence in …
Exciton dephasing via phonon interactions in InAs quantum dots: Dependence on quantum confinement
We report systematic measurements of the dephasing of the excitonic ground-state transition
in a series of InGaAs∕ GaAs quantum dots having different quantum confinement …
in a series of InGaAs∕ GaAs quantum dots having different quantum confinement …
Analysis of the Urbach tail in cesium lead halide perovskites
The role of structural and dynamical disorder in semiconductors is a topic of fundamental
relevance because of its contribution to the spectral line shape of the photoluminescence …
relevance because of its contribution to the spectral line shape of the photoluminescence …
Identification of two regimes of carrier thermalization in pbs nanocrystal assemblies
We bring fresh insight into the ensemble properties of PbS colloidal quantum dots with a
critical review of the literature on semiconductors followed by systematic comparisons …
critical review of the literature on semiconductors followed by systematic comparisons …
Impact of localized states on the recombination dynamics in InGaN/GaN quantum well structures
SW Feng, YC Cheng, YY Chung, CC Yang… - Journal of Applied …, 2002 - pubs.aip.org
Multiple-component decays of photoluminescence (PL) in InGaN/GaN quantum wells have
been widely reported. However, their physical interpretations have not been well discussed …
been widely reported. However, their physical interpretations have not been well discussed …
Condensation phase diagram of cavity polaritons in GaN-based microcavities: Experiment and theory
The evolution of the polariton condensation threshold (P thr) under incoherent optical
pum** is investigated both theoretically and experimentally over a wide range of …
pum** is investigated both theoretically and experimentally over a wide range of …
The red spectral shift in partially disordered semiconductors
PG Eliseev - Journal of applied physics, 2003 - pubs.aip.org
In connection with some spectral anomalies of the luminescence in III–V semiconductors, we
consider here the red spectral shift in partially disordered semiconductors, namely, in …
consider here the red spectral shift in partially disordered semiconductors, namely, in …