Cetyltrimethylammonium bromide reformed ceria nanocomposites of chemical mechanical planarization for silica wafers
Background Chemical-mechanical planarization (CMP) is the most important process in the
semiconductor industry, as it affects the product manufacturing yield. Of the several factors …
semiconductor industry, as it affects the product manufacturing yield. Of the several factors …
Engineering SiO2 Nanoparticles: A Perspective on Chemical Mechanical Planarization Slurry for Advanced Semiconductor Processing
Chemical mechanical polishing (CMP) is a process that uses mechanical abrasive particles
and chemical interaction in slurry to remove materials from the surface of films. With …
and chemical interaction in slurry to remove materials from the surface of films. With …
Tailored electrostatic attraction force between anionic polymer and Si3N4 film in consecutive gate poly open CMP
SH Choi, J Yim, J Lim, S Kim, Y Jeong, K Bae… - Materials Science in …, 2024 - Elsevier
The precise control of chemical mechanical planarization (CMP) process in remove poly Si
gate (RPG) module has garnered considerable attention due to its pivotal role in …
gate (RPG) module has garnered considerable attention due to its pivotal role in …
Recovery and reuse of magnetic silica-coated iron oxide particles for eco-friendly chemical mechanical planarization
Chemical mechanical planarization (CMP), a crucial process in semiconductor
manufacturing, raises environmental concerns due to increased waste generation …
manufacturing, raises environmental concerns due to increased waste generation …
Effect of slurry flow rates on tungsten removal optimization in chemical mechanical planarization
LCK Liau, KM Lin - Microelectronics Reliability, 2023 - Elsevier
In this study, to improve the performance of chemical mechanical planarization (CMP), the
optimal tungsten removal rate (WRR) was determined using a design of experiments (DOE) …
optimal tungsten removal rate (WRR) was determined using a design of experiments (DOE) …
The effect of dicarboxylic acid stabilizers on tungsten chemical mechanical planarization process
D Pan, G Ren, J Zhang, L Wang, S Wang - Colloids and Surfaces A …, 2024 - Elsevier
The effects of dicarboxylic acids (oxalic acid, malonic acid and succinic acid) on the H 2 O 2
stability during tungsten (W) chemical mechanical planarization (CMP) process were studied …
stability during tungsten (W) chemical mechanical planarization (CMP) process were studied …
Effect of Fe-Complex Catalysts on Passivation Layer and Hydroxyl Radical Generation During Tungsten Chemical Mechanical Planarization
H Kim, G Lee, S Lee, P Liu, J Jeon, Z Wang… - Available at SSRN … - papers.ssrn.com
This study investigates the effect of Fe-complex catalysts in improving tungsten chemical
mechanical planarization (CMP) by enhancing material removal rate (MRR) and surface …
mechanical planarization (CMP) by enhancing material removal rate (MRR) and surface …