Realizing efficient on-chip light sources has long been the “holy-grail” for Si-photonics
research. Several important breakthroughs were made in this field in the past few years. In …

In this review we present some of the recent advances in the field of silicon nitride photonic
integrated circuits. The review focuses on the material deposition techniques currently …

Monolithic lasers on Si have long been anticipated as an enabler of full photonic integration,
and significant progress in GeSn material development shows promise for such laser …

Recent demonstrations of optically pumped lasers based on GeSn alloys put forward the
prospect of efficient laser sources monolithically integrated on a Si photonic platform. For …

Recent development of group-IV alloy GeSn indicates its bright future for the application of
mid-infrared Si photonics. Relaxed GeSn with high material quality and high Sn composition …

Two approaches have been compared for the low temperature epitaxy of thick, partially
relaxed GeSn layers on top of Ge strain relaxed buffers. The benefit of using step-graded …

We report on the direct observation of lattice relaxation and Sn segregation of GeSn/Ge/Si
heterostructures under annealing. We investigated strained and partially relaxed epi-layers …

Lead selenide (PbSe) emerged 70+ years ago for its unique photoconductive sensitivity to
the mid-wave infrared (MWIR) spectrum; however, new and exciting research continues to …

Group IV semiconductor optoelectronic devices are now possible by using strain-free direct
band gap GeSn alloys grown on a Ge/Si virtual substrate with Sn contents above 9%. Here …

Group IV alloys have attracted interest in the drive to create Si compatible, direct band gap
materials for implementation in complementary metal oxide semiconductor (CMOS) and …