This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

We report the fabrication and measurement of silicon quantum dots with tunable tunnel
barriers in a narrow-channel field-effect transistor. Low-temperature transport spectroscopy …

Spin blockade occurs when an electron is unable to access an energetically favourable path
through a quantum dot owing to spin conservation, resulting in a blockade of the current …

We present measurements of resonant tunneling through discrete energy levels of a silicon
double quantum dot formed in a thin silicon-on-insulator layer. In the absence of …

We use spatial spin separation by a magnetic focusing technique to probe the polarization of
quantum point contacts. The point contacts are fabricated from p-type GaAs/AlGaAs …

Single-electron occupation is an essential component to the measurement and manipulation
of spin in quantum dots, capabilities that are important for quantum information processing …

We report integrated charge sensing measurements on a Si/SiGe double quantum dot. The
quantum dot is shown to be tunable from a single, large dot to a well-isolated double dot …

We consider charge relaxation in the mesoscopic equivalent of an RC circuit. For a single-
channel, spin-polarized contact, self-consistent scattering theory predicts a universal charge …

We report the demonstration of a low-disorder silicon metal–oxide–semiconductor (Si MOS)
quantum dot containing a tunable number of electrons from zero to N= 27. The observed …

The scanning metallic tip of a scanning force microscope was coupled capacitively to
electrons confined in a lithographically defined gate-tunable quantum dot at a temperature …