The move to implement metal oxide based gate dielectrics in a metal-oxide-semiconductor
field effect transistor is considered one of the most dramatic advances in materials science …

Quasibrittle (or brittle heterogeneous) materials are becoming increasingly important for
modern engineering. They include concretes, rocks, fiber composites, tough ceramics, sea …

Nano-reliability measures the ability of a nano-scaled product to perform its intended
functionality. At the nano scale, the physical, chemical, and biological properties of materials …

Understanding the mechanisms of generation of oxygen vacancies in monoclinic (m)-HfO 2
is important for improving and controlling its performance as an oxide layer in transistor gate …

Energy band diagrams for MOS devices are essential for understanding device performance
and reliability. Introduction of high-k gate stacks with a silicon dioxide (SiO 2) interfacial layer …

As a global infrastructure with the aim of enabling objects to communicate with each other,
the Internet of Things (IoT) is being widely used and applied to many critical applications …

The influence of two oxygen source types, H2O and O3, on residual C‐related impurities in
atomic‐layer‐deposited (ALD) Al2O3 film is systematically examined. ALD Al2O3 film grown …

We investigated the temperature dependence of C–V and I–V characteristics in p-type Metal
Oxide Semiconductor (MOS) capacitors with HfO2/SiO2 dielectric stacks. Dramatic …

Electrical properties of hafnium oxide (HfO2) gate dielectric with various metal nitride gate
electrodes, ie, tantalum nitride (TaN), molybdenum nitride (MoN), and tungsten nitride (WN) …

This paper presents a systematic study of various high-K materials on metal gate MOSFET
for 18nm NMOS. From the study, we find a suitable combination materials between the high …