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Resistive random access memory (RRAM): an overview of materials, switching mechanism, performance, multilevel cell (MLC) storage, modeling, and applications
In this manuscript, recent progress in the area of resistive random access memory (RRAM)
technology which is considered one of the most standout emerging memory technologies …
technology which is considered one of the most standout emerging memory technologies …
Advanced Data Encryption using 2D Materials
Advanced data encryption requires the use of true random number generators (TRNGs) to
produce unpredictable sequences of bits. TRNG circuits with high degree of randomness …
produce unpredictable sequences of bits. TRNG circuits with high degree of randomness …
Insight into physics‐based RRAM models–review
This article presents a review of physical, analytical, and compact models for oxide‐based
RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect …
RRAM devices. An analysis of how the electrical, physical, and thermal parameters affect …
Memristor variability and stochastic physical properties modeling from a multivariate time series approach
A powerful time series analysis modeling technique is presented to describe cycle-to-cycle
variability in memristors. These devices show variability linked to the inherent stochasticity of …
variability in memristors. These devices show variability linked to the inherent stochasticity of …
The Electrode‐Ferroelectric interface as the primary constraint on endurance and retention in HZO‐Based ferroelectric capacitors
Ferroelectric hafnium‐zirconium oxide is one of the most relevant CMOS‐compatible
materials for next‐generation, non‐volatile memory devices. Nevertheless, performance …
materials for next‐generation, non‐volatile memory devices. Nevertheless, performance …
Experimental study of the series resistance effect and its impact on the compact modeling of the conduction characteristics of HfO2-based resistive switching memories
The relevance of the intrinsic series resistance effect in the context of resistive random
access memory (RRAM) compact modeling is investigated. This resistance notably affects …
access memory (RRAM) compact modeling is investigated. This resistance notably affects …
: a physical model for RRAM devices simulation
In the last few years, resistive random access memory (RRAM) has been proposed as one of
the most promising candidates to overcome the current Flash technology in the market of …
the most promising candidates to overcome the current Flash technology in the market of …
Investigation of the multilevel capability of TiN/Ti/HfO2/W resistive switching devices by sweep and pulse programming
Multilevel states are clearly distinguished in TiN/Ti/HfO 2/W RRAM devices by programming
sequential voltage ramps and trains of pulses. It has been shown that the filamentary …
sequential voltage ramps and trains of pulses. It has been shown that the filamentary …
Kinetic Monte Carlo analysis of data retention in Al: HfO2-based resistive random access memories
Abstract Kinetic Monte Carlo resistive random access memory simulations are used to
understand different retention experiments performed at several temperatures. The physics …
understand different retention experiments performed at several temperatures. The physics …
[HTML][HTML] Ternary encoder and decoder designs in RRAM and CNTFET technologies
A possible way for the very large scale integration (VLSI) industry to keep up with the pace of
high density, computational capability, and energy efficiency is to look into some …
high density, computational capability, and energy efficiency is to look into some …