CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is
expected. This size scaling will end sooner or later, however, because the typical size is …

Thermal GeO2 oxides up to 136nm thickness were produced by annealing Ge wafers in
pure oxygen at 550 C and 270kPa pressure for up to 10 h. The oxidation kinetics followed …

Ultra-wide-band-gap (UWBG) semiconductors have tremendous potential to advance
electronic devices as device performance improves superlinearly with the increasing gap …

Abstract Er-doped GeO 2 (GeO 2: Er) nanofilms are fabricated by atomic layer deposition on
silicon, from which the 1530 nm electroluminescence (EL) is achieved. The GeO 2: Er …

Germanium oxide (GeO x) films were grown by plasma-enhanced atomic layer deposition
(PE-ALD) at 70, 130, 190 and 250° C, using tetrakis (dimethylamino)-germanium as a …

Thermal oxidation kinetics of Ge was investigated by the 18 O tracing study and re-oxidation
experiments of the SiO 2/GeO 2 stacked oxide-layer. The results suggest that Ge oxidation …

For silicon-based devices using dielectric oxides doped with rare earth ions, their
electroluminescence (EL) performance relies on the sufficient carrier injection. In this work …

Germanium, because of its unique performance, has been widely used in the manufacture of
optical fiber. Recycling germanium is significant because of geographical scarcity and …

Electron beam annealing was used for the first time to form amorphous and crystalline
germanium clusters in GeO [SiO] and GeO [SiO 2] films deposited on fused silica and c-Si …

The structural, elastic, and mechanical properties of the available experimental and
theoretical phases of germanium dioxide (GeO 2) are investigated. Germanium dioxide …