The present work proposes a Ga As-nanowire-based vertical metal-oxide-semiconductor
(MOS) solar cell of quantum scale to achieve very high efficiency beyond the Shockley …

The performance of dual‐gate GaAs‐nanowire field‐effect‐transistor (FET) is investigated as
a charge‐qubit device operating at room temperature. In compatibility with the state‐of‐the …

Over the years, system on chip (SoC) designs have evolved extensively sophisticated in
order to fulfil the need of increasing complexity of running applications driven by the …

We report the fabrication of an array of highly scaled Ge-nanowire-based (radius∼ 25 nm)
vertical metal-oxide-semiconductor devices that can operate as voltage-tunable quantum …

In the pursuit of room temperature quantum hardware, our study introduces a gate voltage
tunable quantum wire within a tri-gated n-type junctionless MOSFET. The application of gate …

The current work explores a geometrically engineered dual gate GaAs nanowire FET with
state of the art miniaturized dimensions for high performance charge qubit operation at room …

In this work, a Si/SiO2/Ge/SiO2/Pt resonant tunneling device (RTD) with an asymmetric
double barrier has been modeled by adopting NEGF formalism. The impact of Ge-quantum …

The article deals with the modeling of gate voltage controlled resonant tunneling transport in
a CMOS compatible double quantum dot channel nanowire FET. The appropriate applied …

The current work explores the geometrical engineering of a state-of-the-art miniaturized
dualgate GaAs nanowire FET for high performance charge qubit operation at room …