Selective electrodeposition of indium microstructures on silicon and their conversion into InAs and InSb semiconductors
The idea of benefitting from the properties of III-V semiconductors and silicon on the same
substrate has been occupying the minds of scientists for several years. Although the …
substrate has been occupying the minds of scientists for several years. Although the …
Monolithic InSb nanostructure photodetectors on Si using rapid melt growth
Monolithic integration of InSb on Si could be a key enabler for future electronic and
optoelectronic applications. In this work, we report the fabrication of InSb metal …
optoelectronic applications. In this work, we report the fabrication of InSb metal …
High mobility of (111)-oriented large-domain (> 100 μm) poly-InSb on glass by rapid-thermal crystallization of sputter-deposited films
Rapid-thermal annealing (RTA) of InSb precursor films, deposited by sputtering using an Ar
plasma at room temperature, has been investigated to achieve high carrier mobility on low …
plasma at room temperature, has been investigated to achieve high carrier mobility on low …
[PDF][PDF] Chemical mechanical polishing of InSb
D Linehan - 2021 - lup.lub.lu.se
This project studies, with the aid of Atomic Force Microscopy (AFM), profilometry and optical
microscopy, how InSb samples with etched holes (floored with W) polish when undergoing …
microscopy, how InSb samples with etched holes (floored with W) polish when undergoing …
[PDF][PDF] The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate by molecular beam epitaxy
J ZHANG, Z YANG, LM ZHENG, XJ ZHU… - 红外与毫米波 …, 2025 - journal.sitp.ac.cn
This paper discusses the influence of Sb/In ratio on the transport properties and crystal
quality of the 200 nm InAsxSb1-x thin film. The Sb content of InAsxSb1-x thin film in all …
quality of the 200 nm InAsxSb1-x thin film. The Sb content of InAsxSb1-x thin film in all …
The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate by molecular beam epitaxy
张静， 阳智， 郑黎明， 朱小娟， 王萍… - Journal of Infrared and …, 2024 - journal.sitp.ac.cn
This paper discusses the influence of Sb/In ratio on the transport properties and crystal
quality of the 200 nm InAsxSb1-x thin film. The Sb content of InAsxSb1-x thin film in all …
quality of the 200 nm InAsxSb1-x thin film. The Sb content of InAsxSb1-x thin film in all …
[PDF][PDF] Discover Nano
KE Hnida‑Gut, M Sousa, P Tiwari, H Schmid - 2023 - researchgate.net
The idea of benefitting from the properties of III-V semiconductors and silicon on the same
substrate has been occupying the minds of scientists for several years. Although the …
substrate has been occupying the minds of scientists for several years. Although the …
[PDF][PDF] V/III比对分子束外延生长的GaAs基InAsxSb1-x电子迁移率的影响
张静， 阳智， 郑黎明， 朱小娟， 王萍， 杨琳 - 红外与毫米波学报, 2024 - journal.sitp.ac.cn
The influence of V/III ratio on electron mobility of the InAsxSb1-x layers grown on GaAs substrate
by molecular beam epitaxy Page 1 第44 卷第1 期 2025 年2 月 红外与毫米波学报 J. Infrared …
by molecular beam epitaxy Page 1 第44 卷第1 期 2025 年2 月 红外与毫米波学报 J. Infrared …