Infrared photodetectors (IRPDs) have become important devices in various applications
such as night vision, military missile tracking, medical imaging, industry defect imaging …

Nanocrystals (NCs), representing a zero-dimensional system, are an ideal platform for
exploring quantum phenomena on the nanoscale, and are expected to play a major role in …

Abstract A CMOS-compatible infrared (IR; 1200–1700 nm) detector based on Ge quantum
dots (QDs) decorated on a single Si-nanowire channel on a silicon-on-insulator (SOI) …

The infrared technology is entering widespread use as it starts fulfilling a growing number of
emerging applications, such as smart buildings and automotive sectors. Majority of infrared …

Despite the dominance in consumer electronics, the use of group-IV semiconductors and
their heterostructures is still limited for photonic devices, attributed to the poor emission …

In the present article we report enhanced light absorption, tunable size-dependent blue shift,
and efficient electron–hole pairs generation in Ge nanoporous films (np-Ge) grown on Si …

We study the effect of quantum dot size on the mid-infrared photo-and dark current,
photoconductive gain, and hole capture probability in ten-period p-type Ge/Si quantum dot …

Germanium (Ge) quantum dot (QD) photodetectors (PDs) were fabricated on Ge substrates
exhibiting a broadband, visible to near-infrared (near-IR) photoresponse in the λ= 400–1550 …

This paper presents the photoresponse characteristics of a high speed Ge nanowires (NWs)
network metal-semiconductor-metal photodetector. Ge NWs with different diameters (30 nm …

Aim of the present contribution is to review several results obtained by the application of
surface photovoltage spectroscopy method to low dimensional semiconductors. Photo …