Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications
Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
Towards magnonic devices based on voltage-controlled magnetic anisotropy
Despite significant technological advances in miniaturization and operational speed,
modern electronic devices suffer from unescapably increasing rates of Joule heating and …
modern electronic devices suffer from unescapably increasing rates of Joule heating and …
Magneto-ionic control of interfacial magnetism
In metal/oxide heterostructures, rich chemical,, electronic,,, magnetic,,, and mechanical,
properties can emerge from interfacial chemistry and structure. The possibility to dynamically …
properties can emerge from interfacial chemistry and structure. The possibility to dynamically …
Reversible control of Co magnetism by voltage-induced oxidation
We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd 2 O 3 gate
oxides can be directly manipulated by voltage. The Co films can be reversibly changed from …
oxides can be directly manipulated by voltage. The Co films can be reversibly changed from …
Recent progress in the voltage-controlled magnetic anisotropy effect and the challenges faced in develo** voltage-torque MRAM
The electron spin degree of freedom can provide the functionality of “nonvolatility” in
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
Large voltage-induced changes in the perpendicular magnetic anisotropy of an MgO-based tunnel junction with an ultrathin Fe layer
We study the voltage control of perpendicular magnetic anisotropy in an ultrathin Fe layer
sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface …
sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface …
Electric-field-controlled magnetoelectric RAM: Progress, challenges, and scaling
We review the recent progress in the development of magnetoelectric RAM (MeRAM) based
on electric-field-controlled writing in magnetic tunnel junctions (MTJs). MeRAM uses the …
on electric-field-controlled writing in magnetic tunnel junctions (MTJs). MeRAM uses the …
Nonvolatile ionic modification of the Dzyaloshinskii-Moriya interaction
The possibility of tuning the Dzyaloshinskii-Moriya interaction (DMI) by electric (E)-field
gating in ultrathin magnetic materials has opened up new perspectives in terms of …
gating in ultrathin magnetic materials has opened up new perspectives in terms of …
Understanding and designing magnetoelectric heterostructures guided by computation: progresses, remaining questions, and perspectives
Magnetoelectric composites and heterostructures integrate magnetic and dielectric materials
to produce new functionalities, eg, magnetoelectric responses that are absent in each of the …
to produce new functionalities, eg, magnetoelectric responses that are absent in each of the …
Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions
Voltage control of spin enables both a zero standby power and ultralow active power
consumption in spintronic devices, such as magnetoresistive random-access memory …
consumption in spintronic devices, such as magnetoresistive random-access memory …