Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications
Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
breakthrough basic research discoveries and industrial applications in the fields of magnetic …
Towards magnonic devices based on voltage-controlled magnetic anisotropy
Despite significant technological advances in miniaturization and operational speed,
modern electronic devices suffer from unescapably increasing rates of Joule heating and …
modern electronic devices suffer from unescapably increasing rates of Joule heating and …
Magneto-ionic control of interfacial magnetism
In metal/oxide heterostructures, rich chemical,, electronic,,, magnetic,,, and mechanical,
properties can emerge from interfacial chemistry and structure. The possibility to dynamically …
properties can emerge from interfacial chemistry and structure. The possibility to dynamically …
Reversible control of Co magnetism by voltage-induced oxidation
We demonstrate that magnetic properties of ultrathin Co films adjacent to Gd 2 O 3 gate
oxides can be directly manipulated by voltage. The Co films can be reversibly changed from …
oxides can be directly manipulated by voltage. The Co films can be reversibly changed from …
Large voltage-induced changes in the perpendicular magnetic anisotropy of an MgO-based tunnel junction with an ultrathin Fe layer
T Nozaki, A Kozioł-Rachwał, W Skowroński, V Zayets… - Physical Review …, 2016 - APS
We study the voltage control of perpendicular magnetic anisotropy in an ultrathin Fe layer
sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface …
sandwiched between the Cr buffer and MgO tunneling barrier layers. A high-interface …
Recent progress in the voltage-controlled magnetic anisotropy effect and the challenges faced in develo** voltage-torque MRAM
The electron spin degree of freedom can provide the functionality of “nonvolatility” in
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
electronic devices. For example, magnetoresistive random access memory (MRAM) is …
Electric-field-controlled magnetoelectric RAM: Progress, challenges, and scaling
PK Amiri, JG Alzate, XQ Cai, F Ebrahimi… - IEEE Transactions …, 2015 - ieeexplore.ieee.org
We review the recent progress in the development of magnetoelectric RAM (MeRAM) based
on electric-field-controlled writing in magnetic tunnel junctions (MTJs). MeRAM uses the …
on electric-field-controlled writing in magnetic tunnel junctions (MTJs). MeRAM uses the …
Understanding and designing magnetoelectric heterostructures guided by computation: progresses, remaining questions, and perspectives
Magnetoelectric composites and heterostructures integrate magnetic and dielectric materials
to produce new functionalities, eg, magnetoelectric responses that are absent in each of the …
to produce new functionalities, eg, magnetoelectric responses that are absent in each of the …
Highly efficient voltage control of spin and enhanced interfacial perpendicular magnetic anisotropy in iridium-doped Fe/MgO magnetic tunnel junctions
Voltage control of spin enables both a zero standby power and ultralow active power
consumption in spintronic devices, such as magnetoresistive random-access memory …
consumption in spintronic devices, such as magnetoresistive random-access memory …
Model of orbital populations for voltage-controlled magnetic anisotropy in transition-metal thin films
Voltage-controlled magnetic anisotropy (VCMA) is an efficient way to manipulate the
magnetization states in nanomagnets and is promising for low-power spintronic …
magnetization states in nanomagnets and is promising for low-power spintronic …