Perovskite oxides with chemical formula ABO 3 are widely studied for their properties
including ferroelectricity, magnetism, strongly correlated physics, optical effects, and …

Strain engineering in perovskite oxides provides for dramatic control over material structure,
phase, and properties, but is restricted by the discrete strain states produced by available …

Reliable polarization retention in a single crystal-like ferroelectric thin film is crucial for the
effective implementation of ferroelectric domain wall (DW) memories. This ensures that the …

Ferroelectric domain walls, topological entities separating domains of uniform polarization,
are promising candidates as active elements for nanoscale memories. In such applications …

The frequency dependence of the coercive field E c in [001] c poled 0.71 Pb (Mg 1/3 Nb 2/3)
O 3–0.29 PbTiO 3 single crystals was investigated as a function of frequency f from 0.01 Hz …

Epitaxial films of multiferroic Bi Fe O 3 (BFO) with different thicknesses are grown on Sr Ru O
3 buffered Sr Ti O 3 (001) substrates using the pulsed laser deposition technique. The room …

Mn‐doped (Bi0. 5Na0. 5) 0.94 Ba0. 06TiO3 (Mn BNBT) thin films were prepared on SrRuO3
(SRO)‐coated (001) SrTiO3 (STO) single crystal substrates by pulsed laser deposition under …

Relaxor ferroelectrics are a unique material class with underlying microscopic processes
that are yet to be fully understood. In particular, the electrical and mechanical field …

Robust retention of ferroelectric polarization in harsh environments is a requirement for the
application of ferroelectric materials in space, liquids, and various chemical conditions …

Ferroelectric (FE) resistive switching has attracted considerable interest as a promising
candidate for applications in non‐volatile memory technology. In this work, via judiciously …