[HTML][HTML] Production and processing of graphene and related materials

C Backes, AM Abdelkader, C Alonso… - 2D …, 2020 - iopscience.iop.org
We present an overview of the main techniques for production and processing of graphene
and related materials (GRMs), as well as the key characterization procedures. We adopt …

Combining graphene with silicon carbide: synthesis and properties–a review

I Shtepliuk, V Khranovskyy… - … Science and Technology, 2016 - iopscience.iop.org
Being a true two-dimensional crystal, graphene possesses a lot of exotic properties that
would enable unique applications. Integration of graphene with inorganic semiconductors …

Device applications of epitaxial graphene on silicon carbide

M Beshkova, L Hultman, R Yakimova - Vacuum, 2016 - Elsevier
Graphene has become an extremely hot topic due to its intriguing material properties
allowing for ground-breaking fundamental research and applications. It is one of the fastest …

Graphene on SiC as a promising platform for magnetic field detection under neutron irradiation

S El-Ahmar, MJ Szary, T Ciuk, R Prokopowicz… - Applied Surface …, 2022 - Elsevier
In this paper, we report on the first experimental study on the impact of neutron radiation on
quasi-free-standing (QFS) graphene. For this purpose, we have fabricated hydrogen …

Nanoscale map** of relativistic photocarrier transports in epitaxial graphene surface and edge states

J Park, Y Oh, M Yang, H Jeon, S Shekhar, J Park… - Carbon, 2024 - Elsevier
We report the direct map** of photo-transport properties of relativistic carriers generated
on terrace-surface and terrace-edge structures of epitaxial graphene grown on silicon …

[HTML][HTML] Defect-engineered graphene-on-silicon-carbide platform for magnetic field sensing at greatly elevated temperatures

T Ciuk, R Kozłowski, A Romanowska, A Zagojski… - Carbon Trends, 2023 - Elsevier
High-temperature electrical properties of p-type hydrogen-intercalated quasi-free-standing
epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated …

[HTML][HTML] Spectroscopic properties of close-to-perfect-monolayer quasi-free-standing epitaxial graphene on 6HSiC (0001)

A Dobrowolski, J Jagiełło, K Piętak-Jurczak… - Applied Surface …, 2024 - Elsevier
In this report, we present transfer-free p-type hydrogen-intercalated quasi-free-standing
epitaxial Chemical Vapor Deposition graphene on 15-mm× 15-mm semi-insulating …

[HTML][HTML] Quasi-free-standing epitaxial graphene on 4H-SiC (0001) as a two-dimensional reference standard for Kelvin Probe Force Microscopy

T Ciuk, B Pyrzanowska, J Jagiełło, A Dobrowolski… - Applied Surface …, 2024 - Elsevier
Abstract Kelvin Probe Force Microscopy is a method to assess the contact potential
difference between a sample and the probe tip. It remains a relative tool unless a reference …

Origin of the double polarization mechanism in aluminum-oxide-passivated quasi-free-standing epitaxial graphene on 6H-SiC (0001)

K Pietak-Jurczak, J Gaca, A Dobrowolski… - ACS Applied …, 2024 - ACS Publications
In this work, we synthesize a 43 nm thick layer of amorphous Al2O3 on transfer-free p-type
hydrogen-intercalated quasi-free-standing (QFS) epitaxial chemical vapor deposition …

[HTML][HTML] The comparison of InSb-based thin films and graphene on SiC for magnetic diagnostics under extreme conditions

S El-Ahmar, M Przychodnia, J Jankowski… - Sensors, 2022 - mdpi.com
The ability to precisely measure magnetic fields under extreme operating conditions is
becoming increasingly important as a result of the advent of modern diagnostics for future …