Ultraviolet GaN light-emitting diodes with porous-AlGaN reflectors
FH Fan, ZY Syu, CJ Wu, ZJ Yang, BS Huang… - Scientific reports, 2017 - nature.com
A GaN/AlGaN ultraviolet light emitting diode (UV-LED) structure with a porous AlGaN
reflector structure has been demonstrated. Inside the UV-LED, the n+-AlGaN/undoped …
reflector structure has been demonstrated. Inside the UV-LED, the n+-AlGaN/undoped …
Fabricating and investigating a beveled mesa with a specific inclination angle to improve electrical and optical performances for GaN-based micro-light-emitting …
C Chu, Y Jia, S Hang, Y Chen, T Jia, KK Tian… - Optics Letters, 2023 - opg.optica.org
In this Letter, beveled mesas for 30?×? 30? µm^ 2 GaN-based micro-light-emitting diodes
(µLEDs) with different inclination angles are designed, fabricated, and measured. We find …
(µLEDs) with different inclination angles are designed, fabricated, and measured. We find …
High reflectance dielectric distributed Bragg reflectors for near ultra-violet planar microcavities: SiO2/HfO2 versus SiO2/SiNx
F Réveret, L Bignet, W Zhigang, X Lafosse… - Journal of Applied …, 2016 - pubs.aip.org
SiO 2/SiN x and SiO 2/HfO 2 distributed Bragg reflectors for the ultra-violet (λ= 360 nm–380
nm) are compared through their structural and optical properties. The SiO 2/HfO 2 system …
nm) are compared through their structural and optical properties. The SiO 2/HfO 2 system …
Anisotropic properties of pipe-GaN distributed Bragg reflectors
CJ Wu, YY Chen, CJ Wang, GY Shiu, CH Huang… - Nanoscale …, 2020 - pubs.rsc.org
We report here a simple and robust process to convert periodic Si-doped GaN/undoped-
GaN epitaxial layers into a porous-GaN/u-GaN distributed Bragg reflector (DBR) structure …
GaN epitaxial layers into a porous-GaN/u-GaN distributed Bragg reflector (DBR) structure …
Enhanced Light Extraction Efficiency by Self-Masking Technology with Carbonized Photoresist for Light-Emitting Diodes
X Zhang, S Li, B Wang, B Chen, H Guo, R Yue, Y Cai - Micromachines, 2023 - mdpi.com
This work investigates a self-masking technology for roughening the surface of light-emitting
diodes (LEDs). The carbonized photoresist with a naturally nano/micro-textured rough …
diodes (LEDs). The carbonized photoresist with a naturally nano/micro-textured rough …
Impact of the bending on the electroluminescence of flexible InGaN/GaN light-emitting diodes
G Tabares, S Mhedhbi, M Lesecq… - IEEE Photonics …, 2016 - ieeexplore.ieee.org
The role that the mother substrate plays to influence the performance of InGaN/GaN-based
light-emitting diodes (LEDs) onto the adhesive flexible tapes is addressed in this letter. For …
light-emitting diodes (LEDs) onto the adhesive flexible tapes is addressed in this letter. For …
AlGaN/GaN/AlGaN DH‐HEMTs Grown on a Patterned Silicon Substrate
R Comyn, S Chenot, WE Alouani… - … status solidi (a), 2018 - Wiley Online Library
In the present work, a Si (111) substrate has been patterned with 120‐μm wide square
mesas separated by 5‐μm deep grooves. An Al0. 29Ga0. 71N/GaN HEMT structure was …
mesas separated by 5‐μm deep grooves. An Al0. 29Ga0. 71N/GaN HEMT structure was …
Blue to yellow emission from (Ga, In)/GaN quantum wells grown on pixelated silicon substrate
It is shown that substrate pixelisation before epitaxial growth can significantly impact the
emission color of semiconductor heterostructures. The wavelength emission from InxGa1 …
emission color of semiconductor heterostructures. The wavelength emission from InxGa1 …
Investigation of pattern-orientation on stress in GaN grown on Si (111) substrate in lateral confinement epitaxy
X Tan, X Ji, T Wei, X Li, X Wei, J Wang, J Li - Superlattices and …, 2018 - Elsevier
GaN-on-Si has attracted wide interests for decades due to its advantages in cost effective
opto-electronics and power electronics. The essential issue for GaN-on-Si epitaxy is the …
opto-electronics and power electronics. The essential issue for GaN-on-Si epitaxy is the …
Hétéroépitaxie de GaN sur Si: De la nucléation à la relaxation des contraintes, étude par microscopie électronique en transmission
N Mante - 2016 - theses.hal.science
Ce travail est consacré à l'hétéroépitaxie de GaN sur substrat Si, étudié à l'échelle
nanométrique par microscopie électronique en transmission. On étudie dans un premier …
nanométrique par microscopie électronique en transmission. On étudie dans un premier …