Electric drive technology trends, challenges, and opportunities for future electric vehicles

I Husain, B Ozpineci, MS Islam… - Proceedings of the …, 2021 - ieeexplore.ieee.org
The transition to electric road transport technologies requires electric traction drive systems
to offer improved performances and capabilities, such as fuel efficiency (in terms of MPGe …

Control development and fault current commutation test for the EDISON hybrid circuit breaker

Y He, Q Yang, Y Li, S Kim, FZ Peng… - … on Power Electronics, 2023 - ieeexplore.ieee.org
The dc circuit breaker is an indispensable building block for dc network systems. Hybrid
circuit breakers that combine mechanical and solid-state switches have more potential to be …

Busbar design and optimization for voltage overshoot mitigation of a silicon carbide high-power three-phase T-type inverter

Z Wang, Y Wu, MH Mahmud, Z Yuan… - … on Power Electronics, 2020 - ieeexplore.ieee.org
The silicon carbide (SiC) devices have faster switching speed than that of the conventional
silicon (Si) devices, which however may cause excessive device voltage overshoot. Larger …

Design of ultracompact gate driver integrated with current sensor and commutation path for a 211-kW three-level SiC aircraft propulsion inverter

X Zhao, R Phukan, CW Chang… - IEEE Journal of …, 2023 - ieeexplore.ieee.org
The aviation industry is increasingly interested in high-efficiency and high-density electric
propulsion systems enabled by high-power silicon carbide (SiC) modules. However …

Characterization and implementation of dual-SiC MOSFET modules for future use in traction converters

J Fabre, P Ladoux, M Piton - IEEE Transactions on Power …, 2014 - ieeexplore.ieee.org
Silicon (Si) insulated-gate bipolar transistors are widely used in railway traction converters.
In the near future, silicon carbide (SiC) technology will push the limits of switching devices in …

Bus bar design for high-power inverters

AD Callegaro, J Guo, M Eull, B Danen… - … on Power Electronics, 2017 - ieeexplore.ieee.org
This paper presents a comprehensive analysis about bus bar design procedure. Some
applications in terms of rated power and shape are investigated regarding their particular …

Design and evaluation of laminated busbar for three-level T-type NPC power electronics building block with enhanced dynamic current sharing

Z Yuan, H Peng, A Deshpande… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
This article focuses on providing the laminated busbar design guidance for a three-level T-
type neutral-pointclamped (3L-TNPC) inverter to achieve low stray inductance and balanced …

Flexible PCB-based 3-D integrated SiC half-bridge power module with three-sided cooling using ultralow inductive hybrid packaging structure

C Chen, Z Huang, L Chen, Y Tan… - IEEE Transactions on …, 2018 - ieeexplore.ieee.org
Silicon carbide (SiC) devices are capable of high switching speeds and also enable high
switching frequency in power electronic converters. However, this feature poses substantial …

An SiC-based half-bridge module with an improved hybrid packaging method for high power density applications

C Chen, Y Chen, Y Li, Z Huang, T Liu… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
SiC devices have the potential to structure high power density converters; however, SiC
devices have high di/dt during switching. Therefore, the parasitic inductances in the power …

1200 V/650 V/160 A SiC+ Si IGBT 3L hybrid T-type NPC power module with enhanced EMI shielding

AI Emon, Z Yuan, AB Mirza… - … on Power Electronics, 2021 - ieeexplore.ieee.org
Three-level (3L) inverters suffer from higher parasitic inductance due to the increased
number of series-connected switches in a single current commutation loop (CCL) results in a …