A Ka-band highly linear power amplifier (PA) is implemented in 28-nm bulk CMOS
technology. Using a deep class-AB PA topology with appropriate harmonic control circuit …

Self-healing as a technique for improving performance and yield of millimeter-wave power
amplifiers (PAs) against process variation and transistor mismatch, load impedance …

This article presents a 60-GHz CMOS power amplifier (PA) with an adaptive impedance-
compensation linearizer in the 65-nm CMOS process. The proposed linearizer adaptively …

US9444417B2 - Weakly coupled RF network based power amplifier architecture - Google
Patents US9444417B2 - Weakly coupled RF network based power amplifier architecture …

A phase-delay cold-FET pre-distortion linearizer technique is proposed to improve the gain
compensation ability compared with the conventional cold-FET pre-distortion linearizer. The …

The disclosure provides a communication circuit including an amplification circuit, a
replicator circuit, and a correction circuit. Specifically, the amplification circuit generates an …

An extensive experimental analysis of the hot carrier injection (HCI) and bias temperature
instability (BTI) aging effects on RF linear power amplifiers (PAs) is presented in this article …

This letter presents an ultrabroadband power amplifier (PA) with AM–phase modulation
(PM) linearizer in a 28-nm bulk CMOS process for 5G millimeter-wave (mm-Wave) mobile …

The utilization of mm-wave bands for wireless radio systems has gained popularity at a
remarkable rate in the last decade. The numerous benefits offered by systems that operate …

Differential temperature sensors can be placed in integrated circuits to extract a signature of
the power dissipated by the adjacent circuit blocks built in the same silicon die. This review …