Structures and electronic transport on silicon surfaces
S Hasegawa, X Tong, S Takeda, N Sato… - Progress in Surface …, 1999 - Elsevier
By utilizing a variety of surface superstructures formed on silicon surfaces and atomic layers
grown on them, close correlations between the atomic-scale structures and electrical …
grown on them, close correlations between the atomic-scale structures and electrical …
Surface-sensitive conductance measurements
Several approaches for surface-sensitive conductance measurements are reviewed.
Particular emphasis is placed on nanoscale multi-point probe techniques. The results for two …
Particular emphasis is placed on nanoscale multi-point probe techniques. The results for two …
Structure of the (√3 × √3 )R30° Ag/Si(111) surface from first-principles calculations
YG Ding, CT Chan, KM Ho - Physical review letters, 1991 - APS
The structure of (√ 3×√ 3) Ag/Si (111) is investigated using first-principles total-energy
calculations. The lowest-energy configuration consists of a top layer of Ag atoms arranged …
calculations. The lowest-energy configuration consists of a top layer of Ag atoms arranged …
Structure analysis of the Si(111)√3 × √3 R30°-Ag surface
The structure of the Si (111)√ 3×√ 3 R30-Ag surface has been analyzed with a novel form
of low-energy ion-scattering spectroscopy and energy-minimization calculations. The …
of low-energy ion-scattering spectroscopy and energy-minimization calculations. The …
Surface electrical conduction due to carrier do** into a surface-state band on Si(111)--Ag
Photoemission spectroscopy has shown that each Ag atom in its two-dimensional adatom
gas (2DAG) phase deposited on the Si (111)-3× 3-Ag surface at room temperature donates …
gas (2DAG) phase deposited on the Si (111)-3× 3-Ag surface at room temperature donates …
Fermi-level pinning and surface-state band structure of the Si(111)-(√3×√3)R30°-Ag surface
LSO Johansson, E Landemark, CJ Karlsson… - Physical review …, 1989 - APS
The surface-state band structure and symmetry properties of the Si (111)-(√ 3×√ 3) R30-Ag
surface have been studied with polarization-dependent, angle-resolved photoemission. In …
surface have been studied with polarization-dependent, angle-resolved photoemission. In …
Theoretical investigation of the structure of the (3× 3) R30°-Au/Si (111) surface
YG Ding, CT Chan, KM Ho - Surface science, 1992 - Elsevier
The structure of the (3× 3) R 30°-Au/Si (111) surface is investigated using first principles total
energy calculations. Most models proposed by experiments have been tested. The lowest …
energy calculations. Most models proposed by experiments have been tested. The lowest …
Theoretical calculations of the scanning-tunneling-microscopy images of the Si (111)√ 3×√ 3-Ag surface
S Watanabe, M Aono, M Tsukada - Physical Review B, 1991 - APS
The scanning-tunneling-microscopy (STM) images of the Si (111)√ 3×√ 3-Ag surface have
been calculated from first principles for a structural model of the surface recently proposed …
been calculated from first principles for a structural model of the surface recently proposed …
Electron correlation, metallization, and Fermi-level pinning at ultrathin K/Si (111) interfaces
HH Weitering, J Chen, NJ DiNardo, EW Plummer - Physical Review B, 1993 - APS
In this paper we present a detailed photoemission study of the K/Si (111) 7× 7 and K/Si
(111)(√ 3×√ 3) R30-B interfaces. Angle-resolved valence-band spectroscopy reveals the …
(111)(√ 3×√ 3) R30-B interfaces. Angle-resolved valence-band spectroscopy reveals the …
Electronic structure of the Si(111)--(Ag+Au) surface
Angle-resolved ultraviolet and x-ray photoelectron spectroscopies were used to analyze the
electronic band structure of the Si (111)− 21× 21 (R±10.89)−(A g+ A u) surface that was …
electronic band structure of the Si (111)− 21× 21 (R±10.89)−(A g+ A u) surface that was …