Emerging in‐plane anisotropic two‐dimensional materials
Black phosphorus (BP) is a rapidly up and coming star in two‐dimensional (2D) materials.
The unique characteristic of BP is its in‐plane anisotropy. This characteristic of BP ignites a …
The unique characteristic of BP is its in‐plane anisotropy. This characteristic of BP ignites a …
Germanium‐based monoelemental and binary two‐dimensional materials: Theoretical and experimental investigations and promising applications
Abstract Two‐dimensional (2D) materials based on group IVA elements have attracted
extensive attention owing to their rich chemical structures and novel properties. This …
extensive attention owing to their rich chemical structures and novel properties. This …
Air-Stable In-Plane Anisotropic GeSe2 for Highly Polarization-Sensitive Photodetection in Short Wave Region
In-plane anisotropic layered materials such as black phosphorus (BP) have emerged as an
important class of two-dimensional (2D) materials that bring a new dimension to the …
important class of two-dimensional (2D) materials that bring a new dimension to the …
Booming development of group IV–VI semiconductors: fresh blood of 2D family
As an important component of 2D layered materials (2DLMs), the 2D group IV metal
chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant …
chalcogenides (GIVMCs) have drawn much attention recently due to their earth‐abundant …
Recent progress in 2D group IV–IV monochalcogenides: synthesis, properties and applications
Coordination-related, 2D structural phase transitions are a fascinating facet of 2D materials
with structural degeneracy. Phosphorene and its new phases, exhibiting unique electronic …
with structural degeneracy. Phosphorene and its new phases, exhibiting unique electronic …
Ultrathin 2D GeSe2 Rhombic Flakes with High Anisotropy Realized by Van der Waals Epitaxy
X Zhou, X Hu, S Zhou, Q Zhang, H Li… - Advanced Functional …, 2017 - Wiley Online Library
As a layered p‐type semiconductor with a wide bandgap of 2.7 eV, GeSe2 can compensate
for the rarity of p‐type semiconductors, which are desired for the production of high …
for the rarity of p‐type semiconductors, which are desired for the production of high …
High‐responsivity photodetection by a self‐catalyzed phase‐pure p‐GaAs nanowire
Defects are detrimental for optoelectronics devices, such as stacking faults can form carrier‐
transportation barriers, and foreign impurities (Au) with deep‐energy levels can form carrier …
transportation barriers, and foreign impurities (Au) with deep‐energy levels can form carrier …
Phase Engineering of Two‐Dimensional Transition Metal Dichalcogenides
Since the successful isolation of single‐layer graphene with an atomic thickness, various
van der Waals (vdW) materials have been intensively studied owing to their unique …
van der Waals (vdW) materials have been intensively studied owing to their unique …
Temperature modulating Fermi level pinning in 2D GeSe for high‐performance transistor
Abstract 2D layered germanium selenide (GeSe) material possesses in‐plane anisotropy
because of low‐symmetry crystal structure with a new degree of freedom for enhanced …
because of low‐symmetry crystal structure with a new degree of freedom for enhanced …
Controllable preparation of ultrathin GeSe nanosheets for infrared photodetection
Y Mao, X Wu, H Chen, J Deng - Infrared Physics & Technology, 2023 - Elsevier
In this paper, high quality 2D GeSe nanosheets are successfully synthesized using Se
powder and Ge powder as raw materials by chemical vapor deposition method. The area of …
powder and Ge powder as raw materials by chemical vapor deposition method. The area of …