In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

Group-III nitride nanowire structures, including GaN, InN, AlN and their alloys, have been
intensively studied in the past decade. Unique to this material system is that its energy …

In this Letter, we demonstrate that with the merit of nanowire structure and a self-catalytic
growth process p-type InN can be realized for the first time by “direct” magnesium (Mg) …

We have investigated the correlated surface electronic and optical properties of [0001]-
oriented epitaxial InN nanowires grown directly on silicon. By dramatically improving the …

The interfacial electronic properties and charge transfer characteristics of pyrite, FeS 2, are
greatly influenced by the presence of electronic states at the crystal free surface. We …

ZnO nanowires are excellent candidates for energy harvesters, mechanical sensors,
piezotronic and piezophototronic devices. The key parameters governing the general …

Envisioned extremely scaled, high-performance memory devices request to conduct the step
from thin semiconductor films to nanoscale structures and the use of promising high-k …

In this article, we provide an overview on the recent advances made in InN, including both
planar and nanowire structures. With the improved epitaxial growth process, the background …

Using density-functional-based total-energy calculations and the LDA-1/2 method to
compute approximately quasiparticle band structures, we have studied clean relaxed InN …

The band structure and the Fermi level pinning at clean and well-ordered sidewall surfaces
of zincblende (ZB)-wurtzite (WZ) GaAs nanowires are investigated by scanning tunneling …