Resistive-switching-based memory devices meet most of the requirements for use in next-
generation information and communication technology applications, including standalone …

Resistive switching (RS) behavior can serve as a building block in the development of non-
volatile memory and neuromorphic computing applications. Thus far, various device …

In this study, a new molecularly imprinted electrochemical sensor is presented for
thiamphenicol (TAP) based on MnO-Fe 3 O 4@ C and a molecularly imprinted polymer …

In this present, the effect of Mn do** was investigated on the structural, surface
morphology, and optical properties of Co 3 O 4 and Mn: Co 3 O 4 thin films prepared by …

In this paper, a novel passive memristor model and its equivalent circuit model are
designed, analysed and realised to investigate the memristor characteristics and their …

This study introduces a low-cost and feasible electroless deposition technique utilized to
fabricate an n-ZnO-based memristor and p-Cu2O/n-ZnO heterojunction diode using a …

In the quest for efficient resistive switching (RS) materials for both non-volatile memory and
neuromorphic computing applications, a variety of functional materials have been …

Recently, extensive researches have been done on memristor to replace current memory
storage technologies. Study on active layer of memristor mostly involving n-type …

Memristor has become one of the alternatives to replace the current memory technologies.
Fabrication of titanium dioxide, TiO 2 memristor has been extensively studied by using …

Résumé Les memristors, ou mémoires résistives analogiques, constituent une catégorie de
composants passifs permettant notamment de grandes avancées dans le domaine de …