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Physical properties of elongated inorganic nanoparticles
Inorganic nanoparticles are among the most investigated nano-objects nowadays, both in
fundamental science and in various technological applications. In this paper, we describe …
fundamental science and in various technological applications. In this paper, we describe …
Intrinsic optical nonlinearity in colloidal seeded grown CdSe/CdS nanostructures: photoinduced screening of the internal electric field
The assessment of the presence and the origin of an intrinsic internal electric field in novel
colloidal CdSe/CdS nanoheterostructures is of fundamental importance in order to …
colloidal CdSe/CdS nanoheterostructures is of fundamental importance in order to …
Polar and nonpolar GaN quantum dots
B Daudin - Journal of Physics: Condensed Matter, 2008 - iopscience.iop.org
Growth, structural and optical properties of GaN quantum dots are reviewed, with a special
emphasis on plasma-assisted molecular beam epitaxy. The versatility of this technique …
emphasis on plasma-assisted molecular beam epitaxy. The versatility of this technique …
Structural and optical study of SnO2 nanobelts and nanowires
1D semiconducting SnO2 nanowires and nanobelts are successfully grown by low cost
Chemical Vapour Deposition directly on large area (100 mm2) Al2O3, SiO2 and Si …
Chemical Vapour Deposition directly on large area (100 mm2) Al2O3, SiO2 and Si …
Morphological, structural and optical study of quasi‐1D SnO2 nanowires and nanobelts
Abstract 0.1–0.3 mm thick entanglements of quasi‐one‐dimensional semiconducting Tin
dioxide nanocrystals, in form of nanowires and nanobelts, are successfully grown by low …
dioxide nanocrystals, in form of nanowires and nanobelts, are successfully grown by low …
Light emission properties of mechanical exfoliation induced extended defects in hexagonal boron nitride flakes
Recently, hexagonal boron nitride (hBN) has become an interesting platform for quantum
optics due to its peculiar defect-related luminescence properties. Concomitantly, hBN was …
optics due to its peculiar defect-related luminescence properties. Concomitantly, hBN was …
Stranski-Krastanov GaN∕ AlN quantum dots grown by metal organic vapor phase epitaxy
We report a thorough study of the growth of self-assembled Ga N∕ Al N quantum dots
(QDs). These QDs were grown on sapphire substrates using the Stranski-Krastanov (SK) …
(QDs). These QDs were grown on sapphire substrates using the Stranski-Krastanov (SK) …
Cathodoluminescence spectroscopy of single SnO2 nanowires and nanobelts
Abstract 1D semiconducting SnO2 nanoribbons in form of nanowires and nanobelts with a
lateral size ranging from 50 to 700 nm and length of several hundreds of micrometers are …
lateral size ranging from 50 to 700 nm and length of several hundreds of micrometers are …
Microcrack-induced strain relief in quantum dots grown on Si(111)
G Sarusi, O Moshe, S Khatsevich, DH Rich… - Physical Review B …, 2007 - APS
The optical properties of vertically stacked self-assembled Ga N∕ Al N quantum dots (QD's)
grown on Si substrates were studied by means of temporally and spatially resolved …
grown on Si substrates were studied by means of temporally and spatially resolved …
Depth-resolved cathodoluminescence spectroscopy of silicon supersaturated with sulfur
We investigate the luminescence of Si supersaturated with S (Si: S) using depth-resolved
cathodoluminescence spectroscopy and secondary ion mass spectroscopy as the S …
cathodoluminescence spectroscopy and secondary ion mass spectroscopy as the S …