Micro light-emitting diode (microLED) technology is expected to be used in next-generation
displays and other applications due to its many advantages. This paper categorizes …

Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Luminescent quantum dots (QDs) and perovskite nanocrystals (PNCs) are promising,
efficient energy converters for advanced displays and light sources. Their widespread …

This work investigates the influence of residual stress on the performance of InGaN-based
red light-emitting diodes (LEDs) by changing the thickness of the underlying n-GaN layers …

Attaining control over the electrical conductivity of gallium nitride through impurity do** is
one of the foremost achievements in semiconductor science. Yet, unwanted contaminants …

GaN-based light-emitting devices have the potential to realize all visible emissions with the
same material system. These emitters are expected to be next-generation red, green, and …

High-efficiency GaN-based green LEDs are of paramount importance to the development of
the monolithic integration of multicolor emitters and full-color high-resolution displays. Here …

InGaN-based LEDs are efficient light sources in the blue–green light range and have been
successfully commercialized in the last decades. Extending their spectral range to the red …

High-density micro light-emitting diode (μ-LED) arrays are key to next-generation ultrahigh-
resolution displays. As a novel candidate, we report monolithic vertically stacked full-color …

Interest in inorganic ternary nitride materials has grown rapidly over the past few decades,
as their diverse chemistries and structures make them appealing for a variety of applications …