Investigation of structural and optical properties of sputtered Zirconia thin films
Zirconium oxide thin films were deposited by sputtering a ZrO2 target under an argon-
oxygen gas mixture and different total gas pressures. Their composition, structure and …
oxygen gas mixture and different total gas pressures. Their composition, structure and …
Influence of oxygen partial pressure on the properties of pulsed laser deposited nanocrystalline zirconia thin films
ZrO 2 thin films were deposited at various oxygen partial pressures (2.0× 10− 5–3.5× 10− 1
mbar) at 973 K on (1 0 0) silicon and quartz substrates by pulsed laser deposition. The …
mbar) at 973 K on (1 0 0) silicon and quartz substrates by pulsed laser deposition. The …
High energy (150 MeV) Fe11+ ion beam induced modifications of physico-chemical and photoluminescence properties of high-k dielectric nanocrystalline zirconium …
This work presents the influence of dominated electronic energy loss over nuclear energy
loss induced by swift heavy ion (SHI) irradiation on the physico-chemical, optical and other …
loss induced by swift heavy ion (SHI) irradiation on the physico-chemical, optical and other …
Microstructural and optical properties of nanocrystalline undoped zirconia thin films prepared by pulsed laser deposition
The zirconium oxide (ZrO 2) thin films are deposited on Si (100) and quartz substrates at
various substrate temperatures (room temperature–973áK) at an optimized oxygen partial …
various substrate temperatures (room temperature–973áK) at an optimized oxygen partial …
Fabrication of CuZn5–ZnO–CuO micro–nano binary superhydrophobic surfaces of Cassie–Baxter and Gecko model on zinc substrates
X Shi, S Lu, W Xu - Materials Chemistry and Physics, 2012 - Elsevier
Superhydrophobic surfaces were prepared via immersing the clean perpendicular zinc
substrates into aqueous copper chloride (CuCl2) solution and followed by annealing in dry …
substrates into aqueous copper chloride (CuCl2) solution and followed by annealing in dry …
Slow trap response of zirconium dioxide thin films on silicon
In this work, we explore the electrical properties of a metal–oxide–semiconductor system
that incorporates a high-k zirconia dielectric with an equivalent oxide thickness of 3 nm …
that incorporates a high-k zirconia dielectric with an equivalent oxide thickness of 3 nm …
Compositional and electrical properties of zirconium dioxide thin films chemically deposited on silicon
S Harasek, HD Wanzenboeck… - Journal of Vacuum …, 2003 - pubs.aip.org
High-k ZrO 2 thin films are grown on p-type silicon by metal–organic chemical vapor
deposition based on zirconiumtetrakistrifluoroacetylacetonate as single-source precursor …
deposition based on zirconiumtetrakistrifluoroacetylacetonate as single-source precursor …
Deposition and plasma measurements of Zr-oxide films with low impurity concentrations by remote PEALD
Zr-oxide film was deposited by remote plasma-enhanced atomic layer deposition (PEALD)
and showed relatively low impurity contamination. In the Zr-oxide film deposition process …
and showed relatively low impurity contamination. In the Zr-oxide film deposition process …
Microstructural and mechanical properties of Al2O3/ZrO2 nanomultilayer thin films prepared by pulsed laser deposition
Single layer aluminium oxide (Al 2 O 3), zirconium oxide (ZrO 2) and Al 2 O 3/ZrO 2 nano
multilayer films were deposited on Si (100) substrates at room temperature by pulsed laser …
multilayer films were deposited on Si (100) substrates at room temperature by pulsed laser …
Facile fabrication and wettability of nestlike microstructure maintained mixed metal oxides films from layered double hydroxide films precursors
H Chen, F Zhang, S Xu, DG Evans… - Industrial & engineering …, 2008 - ACS Publications
Mixed metal oxide (MMO) films containing Ni2+ and Al3+ have been fabricated by a simple
process involving calcination of layered double hydroxide (LDH) film precursors at 300 …
process involving calcination of layered double hydroxide (LDH) film precursors at 300 …