Low-dimensional semiconductor materials structures, where nanowires are needle-like one-
dimensional examples, have developed into one of the most intensely studied fields of …

Over the past decade, tremendous progress has been achieved in the development of
nanoscale semiconductor materials with a wide range of bandgaps by alloying different …

In this review article, we discuss the molecular beam epitaxy and basic structural, electronic,
optical, excitonic, chemical and catalytic properties of III-nitride nanostructures, including …

A droop-free nitride light-emitting diode (LED) with the capacity to operate beyond the
“green gap” has been a subject of intense scientific and engineering interest. While several …

A high efficiency, high brightness, and robust micro or sub-microscale red light emitting
diode (LED) is an essential, yet missing, component of the emerging virtual reality and future …

Spontaneously grown, self-aligned AlGaN nanowire ultraviolet light emitting diodes still
suffer from low efficiency partially because of the strong surface recombination caused by …

Microscale visible light emitting diodes (LEDs), as well as LEDs and laser diodes operating
in the mid and deep ultraviolet (UV), have emerged as the frontier of semiconductor …

We present experimental results confirming extreme quantum confinement in GaN/Al x Ga1–
x N (x= 0.65 and 1.0) nanowire and planar heterostructures, where the GaN layer thickness …

Sources of quantum light that utilize photonic nanowire designs have emerged as potential
candidates for high efficiency non-classical light generation in quantum information …

The characteristics of visible (λ∼ 550 nm) InGaN/GaN disk-in-nanowire array
photoconductive detectors have been measured and analyzed. The nanowire arrays are …