3-D electrothermal modeling of SiC multichip power modules for a more accurate reliability assessment
S Race, R Stark… - CIPS 2022; 12th …, 2022 - ieeexplore.ieee.org
This paper shows a 3-D electro-thermal FEM-based modeling of SiC multichip power
modules including the volume heat generation of SiC power MOSFET dies. Based on a …
modules including the volume heat generation of SiC power MOSFET dies. Based on a …
Full-SiC Single-Chip High-Side and Low-Side Dual-MOSFET for Ultimate Power Vertical Integration–Basic Concept and Technology
R Makhoul, N Beydoun, A Bourennane… - 2023 25th European …, 2023 - ieeexplore.ieee.org
A full monolithic integration in multi-terminal SiC dies of a generic H-bridge power converter
(800V/10A) consisting of dual N-type vertical MOSFET switches within only two multi …
(800V/10A) consisting of dual N-type vertical MOSFET switches within only two multi …
Full-SiC Single-Chip Buck and Boost MOSFET-JBS Converters for Ultimate Efficient Power Vertical Integration
R Makhoul, A Bourennane, LV Phung… - … on Mixed Design of …, 2023 - ieeexplore.ieee.org
This paper aims at demonstrating the relevance of a new design perimeter for power
switching cells through a monolithic vertical integration approach on a multi-terminal power …
switching cells through a monolithic vertical integration approach on a multi-terminal power …
Concept and technology for full monolithic MOSFET and JBS vertical integration in multi-terminal 4H-SiC power converters
R Makhoul, N Beydoun, A Bourennane… - Solid State …, 2024 - Trans Tech Publ
New and original medium power multi-terminal SiC monolithic converter architectures are
investigated with vertical switching cells based on SiC JBS diodes and VDMOS transistors …
investigated with vertical switching cells based on SiC JBS diodes and VDMOS transistors …