A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

Spin electronics is a rapidly expanding field stimulated by a strong synergy between
breakthrough basic research discoveries and industrial applications in the fields of magnetic …

We demonstrate tunnel magnetoresistance (TMR) ratios of up to 631% at room temperature
(RT) using CoFe/MgO/CoFe (001) epitaxial magnetic tunnel junctions (MTJs). The TMR ratio …

Two-dimensional transition metal carbides (MXenes) have great potential to achieve
intrinsic magnetism due to their available chemical and structural diversity. In this work, by …

Half metal magnets are of great interest in the field of spintronics because of their potential
full spin polarization at the Fermi level (EF) and low magnetization dam**. The high Curie …

The discovery of two-dimensional (2D) van der Waals (vdW) intrinsic magnets has opened a
promising avenue to design high-performance magnetic tunnel junctions (MTJs) based on …

Tunnel magnetoresistance (TMR) in MgO-based magnetic tunnel junctions (MTJs) with
equiatomic quaternary CoFeMnSi Heusler and CoFe alloy electrodes is studied. The …

An abrupt transition of the interfacial exchange coupling from ferromagnetic to
antiferromagnetic was observed in the interface of perpendicularly magnetized L 1 0 …

We studied magnetic tunnel junctions (MTJs) with a MgO (001) barrier and metastable bcc
Co 3 Mn (001) disordered alloy electrodes. A tunnel magnetoresistance (TMR) ratio was …

Several scientific issues concerning the latest generation read heads for magnetic storage
devices, based on CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) are known to be …