Europium (Eu)-implanted AlN nanowire (NW) p–n junctions, subjected to rapid thermal
annealing at 1000° C, were investigated in view of application as red light-emitting diodes …

GaN-based micro-LEDs typically suffer from a size-dependent efficiency due to the relatively
long carrier lifetime and sidewall-related recombination effects. We demonstrate that for red …

The excitation efficiency and external luminescence quantum efficiency of trivalent Eu 3+
ions doped into gallium nitride (Ga N) is studied under optical and electrical excitation. For …

The development of efficient electrically driven color-tunable solid-state light sources will
enable new capabilities in lighting and display technologies. Although alternative light …

The carrier mobility and dynamics of nonequilibrium carriers in Eu-doped GaN have been
determined by above-band-gap, optically excited, time-resolved terahertz spectroscopy and …

The combination of carbon dots (CDs) and rare-earth ions has attracted increasing attention
due to their unique fluorescence properties. Herein, CDs are incorporated with NaYF 4: Eu …

Advances in lighting and quantum computing will require new degrees of control over the
emission of photons, where localized defects and the quantum confinement of carriers can …

The dopant distribution and surface and structural properties of Er-and Eu-doped GaN
samples were investigated using atom probe tomography (APT) and atomic force …

Tunable nanoscale light emitters are essential to accomplish future multifunctional
optoelectronic nano-devices. Here, we present an approach for achieving red …

To elucidate the energy transfer and reexcitation processes in Eu-doped GaN layers that are
used in recently developed, highly efficient red light-emitting diodes, a systematic series of …