It is expected the fact that the current following across metal-semiconductor (MS) rectifying
contact named as Schottky barrier diode (SBDs) and effect of sample temperature on their …

The Schottky barrier junctions of tin disulfide (SnS2) on p-silicon were fabricated using sol–
gel spin technique. The photoresponse and junction properties of the diode were …

Zinc oxide microrings formed nanoparticles were prepared on n-type silicon substrate by sol–
gel method. The structure of ZnO film is confirmed by XRD analysis and ZnO film exhibits a …

Optical sensing from the solar light range of light is very important for industrial process
monitoring and life science. Hence, we present inorganic photodetector, operating between …

Wide band gap semiconducting layer of n-type ZnO thin film was fabricated on n-type Si
substrate with electrochemical deposition technique and the current–voltage (I–V) and the …

The current–voltage (I–V), capacitance–voltage (C–V) and capacitance–frequency (C–f)
characteristics of Al/Orange G/n-Si/AuSb structure were investigated at room temperature. A …

The junction characteristics of the organic compound methyl-red film (2-[4-(dimethylamino)
phenylazo] benzoic acid) on a p-type Si substrate have been studied. The current–voltage …

Schottky barrier diode based on graphene oxide (GO) with the structure of Al/GO/n-Si/Al was
fabricated. The current–voltage characteristics of the diode were investigated under dark …

An Al/Methyl Red/p-Si sandwich Schottky barrier diode (SBD) has been fabricated by adding
a solution of the organic compound Methyl Red in chloroform onto a p-Si substrate, and then …

The current–voltage (I–V) characteristics of Al/methyl-red/Ag surface-type structure were
investigated in air at room temperature. The conventional forward bias I–V method, Cheung …