High-performance type-II superlattices of III–V semiconductor materials play an important
role in the development and application of infrared optoelectronic devices. Improving the …

A procedure is developed for the growth of thick, conformal CdS shells that preserve the
optical properties of 5 nm HgSe cores. The n-do** of the HgSe/CdS core/shell particles is …

III–V semiconductor type-II superlattices (T2SLs) are a promising material system with the
potential to significantly reduce the dark current of, and thus realize high-performance in …

Low‐cost, room‐temperature operating light emitters in the 3–8 µm mid‐wave infrared
wavelengths are desired for a broad range of applications such as chemical spectroscopy …

Efficient, reliable, and low-cost mid-infrared interband cascade lasers (ICLs) are needed to
meet the growing demands of many useful applications such as chemical sensing …

Efficient mid-infrared light output has been obtained by incorporating a W-superlattice into a
cascaded mid-infrared LED structure and by thinning and roughening of the emission side of …

We investigate the beneficial effects of rapid thermal annealing on structure and
photoluminescence of PbSe thin films on GaAs (001) grown below 150 C, with a goal of low …

We report on photoluminescence in the 3–7 µm mid-wave infrared (MWIR) range from sub-
100 nm strained thin films of rocksalt PbSe (001) grown on GaAs (001) substrates by …

GaInSb crystal is a promising substrate material that can be used to prepare various high-
performance devices. Ga 0.86 In 0.14 Sb and Al-doped Ga 0.86 In 0.14 Sb (Ga 0.86 In 0.14 …

Mid-wave infrared LEDs based on 6.1 Å III/V semiconductors have trailed well behind visible
LEDs in their wallplug efficiency. One contributing inefficiency is the low internal quantum …