Status of the growth and fabrication of AlGaN-based UV laser diodes for near and mid-UV wavelength
In this article, the development of mid-UV laser diodes based on the AlGaN materials system
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
is reviewed. The targeted wavelength for these lasers covers the range from 200 to 350 nm …
N-and P-type Do** in Al-rich AlGaN and AlN
B Sarkar, S Washiyama, MH Breckenridge… - ECS …, 2018 - iopscience.iop.org
Attaining a high conductivity in both p-type and n-type Al-rich AlGaN epitaxial films is
necessary for highly efficient deep-UV emitters. While reliable n-type conductivity has been …
necessary for highly efficient deep-UV emitters. While reliable n-type conductivity has been …
[HTML][HTML] Defect-free Ni/GaN Schottky barrier behavior with high temperature stability
In this work, we report on defect-free homogeneous behavior of Ni Schottky contacts
patterned on surface treated n-GaN by photolithography with unity ideality factor, high …
patterned on surface treated n-GaN by photolithography with unity ideality factor, high …
Performance and reliability of state-of-the-art commercial UVC light emitting diodes
Commercially-available, sapphire-and AlN-based ultraviolet-C light emitting diodes (UVC
LEDs) emitting in the range of 265–275 nm were evaluated and compared. Both AlN-and …
LEDs) emitting in the range of 265–275 nm were evaluated and compared. Both AlN-and …
[HTML][HTML] High temperature and low pressure chemical vapor deposition of silicon nitride on AlGaN: Band offsets and passivation studies
In this work, we employed X-ray photoelectron spectroscopy to determine the band offsets
and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride …
and interface Fermi level at the heterojunction formed by stoichiometric silicon nitride …
Nonlinear analysis of vanadium-and titanium-based contacts to Al-rich n-AlGaN
In this work, we report on voltage dependent contact characteristics of Al-rich n-AlGaN due
to the presence of a Schottky barrier at the metal–AlGaN interface. Current–voltage …
to the presence of a Schottky barrier at the metal–AlGaN interface. Current–voltage …
A review of state of the art fabrication approaches for efficiency improvement in ultra-violet region light emitting diodes
This article addresses the significant methodology adopted for fabrication of Ultra Violet light
emitting Diodes (UV LED) in two different configurations termed as top-emitting and bottom …
emitting Diodes (UV LED) in two different configurations termed as top-emitting and bottom …
Role of polarity in SiN on Al/GaN and the pathway to stable contacts
Despite being the most widely used dielectric for passivation of GaN-based lateral devices,
amorphous silicon-nitride still faces many stability challenges, which arise from its complex …
amorphous silicon-nitride still faces many stability challenges, which arise from its complex …
Progress and challenges of AlGaN Schottky diodes grown on AlN substrates
Quasi-vertical, high Al composition AlGaN Schottky diodes with breakdown voltages up to
500 V were grown on high quality AlN single crystal substrates. Diodes exhibited a~ 10 6 …
500 V were grown on high quality AlN single crystal substrates. Diodes exhibited a~ 10 6 …
Demonstration of aluminum nitride metal oxide semiconductor field effect transistor on sapphire substrate
Aluminum nitride (AlN) is a promising ultrawide bandgap material with significant
advantages for power electronics and optoelectronic applications due to its high breakdown …
advantages for power electronics and optoelectronic applications due to its high breakdown …