Chalcogenides by design: functionality through metavalent bonding and confinement

BJ Kooi, M Wuttig - Advanced materials, 2020 - Wiley Online Library
A unified picture of different application areas for incipient metals is presented. This
unconventional material class includes several main‐group chalcogenides, such as GeTe …

Endurance of chalcogenide optical phase change materials: a review

L Martin-Monier, CC Popescu, L Ranno… - Optical Materials …, 2022 - opg.optica.org
Chalcogenide phase change materials (PCMs) are truly remarkable compounds whose
unique switchable optical and electronic properties have fueled an explosion of emerging …

Reversible optical switching of infrared antenna resonances with ultrathin phase-change layers using femtosecond laser pulses

AKU Michel, P Zalden, DN Chigrin, M Wuttig… - Acs …, 2014 - ACS Publications
Recently, phase-change materials (PCMs) have gained a lot of interest in the field of active
metamaterials and plasmonics due to their switchable optical properties. In the infrared …

Inter-diffusion of plasmonic metals and phase change materials

L Lu, W Dong, JK Behera, L Chew… - Journal of materials …, 2019 - Springer
This work investigates the diffusion of metal atoms into phase change chalcogenides, which
is problematic because it can destroy resonances in photonic devices. Interfaces between …

Active hyperbolic metamaterials: progress, materials and design

L Lu, RE Simpson, SK Valiyaveedu - Journal of Optics, 2018 - iopscience.iop.org
Hyperbolic metamaterials (HMMs) are a special class of metamaterials that exhibit a
hyperbolic dispersion relation. Hyperbolic dispersion is rarely observed in natural materials …

Cap** Layer Effects on Sb2S3-Based Reconfigurable Photonic Devices

TY Teo, N Li, LYM Tobing, ASK Tong, DKT Ng… - ACS …, 2023 - ACS Publications
Cap** layers are essential for protecting phase change materials (PCMs) used in
nonvolatile photonics technologies. This work demonstrates how (ZnS) 0.8-(SiO2) 0.2 caps …

In situ observation of the impact of surface oxidation on the crystallization mechanism of GeTe phase-change thin films by scanning transmission electron microscopy

R Berthier, N Bernier, D Cooper, C Sabbione… - Journal of Applied …, 2017 - pubs.aip.org
The crystallization mechanisms of prototypical GeTe phase-change material thin films have
been investigated by in situ scanning transmission electron microscopy annealing …

Enhanced crystallization of GeTe from an Sb2Te3 template

RE Simpson, P Fons, AV Kolobov, M Krbal… - Applied Physics …, 2012 - pubs.aip.org
Crystalline Sb 2 Te 3 templates reduce the crystallization time of the phase change material
GeTe by four orders of magnitude to 20 ns. Structural measurements and density functional …

Overview of the role of alloying modifiers on the performance of phase change memory materials

L Kang, L Chen - Journal of Electronic Materials, 2021 - Springer
Phase change memory (PCM) based on chalcogenide compounds is considered to be an
excellent candidate for next-generation memory because of its high speed, low energy …

High thermal stability and fast speed phase change memory by optimizing GeSbTe with Scandium do**

Y Wang, T Wang, G Liu, T Guo, T Li, S Lv, Y Cheng… - Scripta Materialia, 2019 - Elsevier
Phase change materials along the GeTe-Sb isoelectronic tie line are proved to be promising
host material for optimization, based on which the well-known golden composition is …