We review five solder joint reactions in 3D IC packaging technology which are of wide
interest:(1) Scallop-type growth of Cu 6 Sn 5 in solid-liquid interdiffusion reaction,(2) Whisker …

Metal silicides have played an indispensable role in the raped development of
microelectronics since PtSi was first used to improve the rectifying characteristics of diodes …

An effective heat of formation (EHF) model for predicting compound phase formation
sequence is described. The EHF model defines an effective heat of formation ΔH′, which is …

Silicides have been a topic of intensive research for more than a decade. The driving force
for these investigations has certainly been the interesting materials aspects of the silicides …

The monograph deals with a physico-chemical approach to the problem of solid-state
growth of chemical compound layers and reaction diffusion in binary heterogeneous …

In nanoscale interdiffusion and reaction, a Kirkendall void in the core of a nanocrystal has
been proposed to explain the formation of hollow nanosize particles in recent literature. We …

Implanted noble gas atoms of Ar and Xe have been used as diffusion markers in growth
studies of silicides formed by reacting metal films with silicon substrates. MeV 4 He ion …

Publisher Summary This chapter focuses on formation and characterization of transition-
metal silicides. Many deposition techniques can be applied to form thin silicide layers on …

Studies of the properties and characteristics of transition metal silicides have been
stimulated by their (potential) use in integrated circuit technology. This review describes …

Near-noble metals react with Si to form a metal-rich silicide at 100 to 200· C. Growth of the
silicide is selected by the criterion that diffusion of near-noble metal atoms to the silicide …