Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …

A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …

The structural and electrical properties of Mo thin films with thicknesses between 3 and 50
nm, deposited by physical vapor deposition, have been evaluated in order to assess the …

Epitaxial Ru (0001) layers are sputter deposited onto Al 2 O 3 (0001) substrates and their
resistivity ρ measured both in situ and ex situ as a function of thickness d= 5–80 nm in order …

Increasing resistivity of metal wires with reducing nanoscale dimensions is a major
performance bottleneck of semiconductor computing technologies. We show that metals with …

Interconnect resistance and reliability have emerged as critical factors limiting the
performance of advanced CMOS circuits. With the slowdown of transistor scaling …

Intermetallic compounds have been proposed as potential interconnect materials for
advanced semiconductor devices. This study reports the interdiffusion reliability and …

The state-of-the-art CMOS technology has started to adopt three-dimensional (3D)
integration approaches, enabling continuous chip density increment and performance …

Co has elicited a strong interest to replace Cu for future interconnect applications in
microelectronic circuits due to its potentially lower resistivity and better reliability at scaled …

The resistivity size effect in nanoscale metals is of both scientific and technological interest,
the latter due to its importance to interconnects between transistors in integrated circuits. In …