Thermal management and packaging of wide and ultra-wide bandgap power devices: a review and perspective
Power semiconductor devices are fundamental drivers for advances in power electronics,
the technology for electric energy conversion. Power devices based on wide-bandgap …
the technology for electric energy conversion. Power devices based on wide-bandgap …
Recent progress of Ga2O3 power technology: large-area devices, packaging and applications
Benefitted from progress on the large-diameter Ga 2 O 3 wafers and Ga 2 O 3 processing
techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward …
techniques, the Ga 2 O 3 power device technology has witnessed fast advances toward …
An avalanche-and-surge robust ultrawide-bandgap heterojunction for power electronics
F Zhou, H Gong, M ** and NiO parameters in achieving 8.9 kV breakdown in 100 μm diameter and 4 kV/4 A in 1 mm diameter NiO/β-Ga2O3 rectifiers
Reproducible NiO/Ga2O3 Vertical Rectifiers with Breakdown Voltage > 8 kV
Optimized vertical heterojunction rectifiers with a diameter of 100 µm, consisting of sputter-
deposited p-type NiO forming ap–n junction with thick (10 µm) Ga2O3 drift layers grown by …
deposited p-type NiO forming ap–n junction with thick (10 µm) Ga2O3 drift layers grown by …
[HTML][HTML] NiO junction termination extension for high-voltage (> 3 kV) Ga2O3 devices
Edge termination is the enabling building block of power devices to exploit the high
breakdown field of wide bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors …
breakdown field of wide bandgap (WBG) and ultra-wide bandgap (UWBG) semiconductors …
Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer layers
Enhancing the electron mobility in Si-doped (010) β-Ga2O3 films with low-temperature buffer
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