Turnitin
降AI改写
早检测系统
早降重系统
Turnitin-UK版
万方检测-期刊版
维普编辑部版
Grammarly检测
Paperpass检测
checkpass检测
PaperYY检测
Synthesis and Bioapplications of Ag2S Quantum Dots with Near‐Infrared Fluorescence
Quantum dots (QDs) with near‐infrared fluorescence (NIR) are an emerging class of QDs
with unique capabilities owing to the deeper tissue penetrability of NIR light compared with …
with unique capabilities owing to the deeper tissue penetrability of NIR light compared with …
[HTML][HTML] Review of Si-based GeSn CVD growth and optoelectronic applications
Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
Electrically injected GeSn lasers on Si operating up to 100 K
Monolithic lasers on Si have long been anticipated as an enabler of full photonic integration,
and significant progress in GeSn material development shows promise for such laser …
and significant progress in GeSn material development shows promise for such laser …
The emergence of silicon photonics as a flexible technology platform
In this paper, we present a brief history of silicon photonics from the early research papers in
the late 1980s and early 1990s, to the potentially revolutionary technology that exists today …
the late 1980s and early 1990s, to the potentially revolutionary technology that exists today …
Optically pumped GeSn microdisk lasers on Si
The strong correlation between advancing the performance of Si microelectronics and their
demand of low power consumption requires new ways of data communication. Photonic …
demand of low power consumption requires new ways of data communication. Photonic …
[HTML][HTML] An optically pumped 2.5 μm GeSn laser on Si operating at 110 K
This paper reports the demonstration of optically pumped GeSn edge-emitting lasers grown
on Si substrates. The whole device structures were grown by an industry standard chemical …
on Si substrates. The whole device structures were grown by an industry standard chemical …
Si-based GeSn lasers with wavelength coverage of 2–3 μm and operating temperatures up to 180 K
A Si-based monolithic laser is strongly desired for the full integration of Si-photonics. Lasing
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
from the direct bandgap group-IV GeSn alloy has opened a new avenue, different from the …
Optically pumped GeSn lasers operating at 270 K with broad waveguide structures on Si
Lasing from direct bandgap group-IV GeSn alloys has opened a new venue for the
development of Si-based monolithic laser. In this work, we demonstrate optically pumped …
development of Si-based monolithic laser. In this work, we demonstrate optically pumped …
Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence
Material and optical characterizations have been conducted for epitaxially grown Ge 1− x Sn
x thin films on Si with Sn composition up to 10%. A direct bandgap Ge 0.9 Sn 0.1 alloy has …
x thin films on Si with Sn composition up to 10%. A direct bandgap Ge 0.9 Sn 0.1 alloy has …
The direct and indirect bandgaps of unstrained SixGe1− x− ySny and their photonic device applications
Using empirical pseudopotential theory, the direct (Γ) and indirect bandgaps (L and X) of
unstrained crystalline Si x Ge 1− x− y Sn y have been calculated over the entire xy …
unstrained crystalline Si x Ge 1− x− y Sn y have been calculated over the entire xy …