Strategies for inorganic incorporation using neat block copolymer thin films for etch mask function and nanotechnological application

C Cummins, T Ghoshal, JD Holmes… - Advanced …, 2016 - Wiley Online Library
Block copolymers (BCPs) and their directed self‐assembly (DSA) has emerged as a
realizable complementary tool to aid optical patterning of device elements for future …

Rapid ordering of block copolymer thin films

PW Majewski, KG Yager - Journal of Physics: Condensed Matter, 2016 - iopscience.iop.org
Block-copolymers self-assemble into diverse morphologies, where nanoscale order can be
finely tuned via block architecture and processing conditions. However, the ultimate usage …

50th Anniversary Perspective: Block PolymersPure Potential

CM Bates, FS Bates - Macromolecules, 2017 - ACS Publications
Block polymers have undergone extraordinary evolution since their inception more than 60
years ago, maturing from simple surfactants to an expansive class of macromolecules …

MoS2 Field-Effect Transistor with Sub-10 nm Channel Length

A Nourbakhsh, A Zubair, RN Sajjad, A Tavakkoli KG… - Nano …, 2016 - ACS Publications
Atomically thin molybdenum disulfide (MoS2) is an ideal semiconductor material for field-
effect transistors (FETs) with sub-10 nm channel lengths. The high effective mass and large …

Nanoscale chemical imaging by photoinduced force microscopy

D Nowak, W Morrison, HK Wickramasinghe… - Science …, 2016 - science.org
Correlating spatial chemical information with the morphology of closely packed
nanostructures remains a challenge for the scientific community. For example …

Sub-10-nm patterning via directed self-assembly of block copolymer films with a vapour-phase deposited topcoat

HS Suh, DH Kim, P Moni, S **ong, LE Ocola… - Nature …, 2017 - nature.com
Directed self-assembly (DSA) of the domain structure in block copolymer (BCP) thin films is
a promising approach for sub-10-nm surface patterning. DSA requires the control of …

Single-step dual-layer photolithography for tunable and scalable nanopatterning

W Liu, J Wang, X Xu, C Zhao, X Xu, PS Weiss - Acs Nano, 2021 - ACS Publications
Conventional photolithography, due to its scalability, robustness, and straightforward
processes, has been widely applied to micro-and nanostructure manufacturing in …

Directed self-assembly of block copolymers for 7 nanometre FinFET technology and beyond

CC Liu, E Franke, Y Mignot, R **e, CW Yeung… - Nature …, 2018 - nature.com
The drive to deliver increasingly powerful and feature-rich integrated circuits has made
technology node scaling—the process of reducing transistor dimensions and increasing …

The Limits of Lamellae-Forming PS-b-PMMA Block Copolymers for Lithography

L Wan, R Ruiz, H Gao, KC Patel, TR Albrecht, J Yin… - ACS …, 2015 - ACS Publications
We explore the lithographic limits of lamellae-forming PS-b-PMMA block copolymers by
performing directed self-assembly and pattern transfer on a range of PS-b-PMMA materials …

Directed self-assembly and pattern transfer of five nanometer block copolymer lamellae

AP Lane, XM Yang, MJ Maher, G Blachut, Y Asano… - ACS …, 2017 - ACS Publications
The directed self-assembly (DSA) and pattern transfer of poly (5-vinyl-1, 3-benzodioxole-
block-pentamethyldisilylstyrene)(PVBD-b-PDSS) is reported. Lamellae-forming PVBD-b …