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Si–Ge–Sn alloys: From growth to applications
In this review article, we address key material parameters as well as the fabrication and
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
application of crystalline GeSn binary and SiGeSn ternary alloys. Here, the transition from an …
[HTML][HTML] Review of Si-based GeSn CVD growth and optoelectronic applications
Y Miao, G Wang, Z Kong, B Xu, X Zhao, X Luo, H Lin… - Nanomaterials, 2021 - mdpi.com
GeSn alloys have already attracted extensive attention due to their excellent properties and
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
wide-ranging electronic and optoelectronic applications. Both theoretical and experimental …
The past, present, and future of silicon photonics
R Soref - IEEE Journal of selected topics in quantum electronics, 2007 - ieeexplore.ieee.org
The pace of the development of silicon photonics has quickened since 2004 due to
investment by industry and government. Commercial state-of-the-art CMOS silicon-on …
investment by industry and government. Commercial state-of-the-art CMOS silicon-on …
SixSnyGe1-xy and related alloy heterostructures based on Si, Ge and Sn
J Kouvetakis, M Bauer, J Tolle - US Patent 7,598,513, 2009 - Google Patents
Z. Charafi and N. Bouarissa,“The effect of the violation of Vegard's law on the optical bowing
in SiGe alloys'. Phys. Lett. A. vol. 234, pp. 493-497 (1997). H. Kajiyama, SI. Muramatsu, T …
in SiGe alloys'. Phys. Lett. A. vol. 234, pp. 493-497 (1997). H. Kajiyama, SI. Muramatsu, T …
GeSn alloys and ordered phases with direct tunable bandgaps grown directly on silicon
(57) ABSTRACT A method for depositing an epitaxial Ge—Sn layer on a substrate in a CVD
reaction chamber includes introducing into the chamber a gaseous precursor comprising …
reaction chamber includes introducing into the chamber a gaseous precursor comprising …
Method for preparing ge1-x-ysnxey (e= p, as, sb) semiconductors and related si-ge-sn-e and si-ge-e analogs
J Kouvetakis, M Bauer, J Tolle, C Cook - US Patent 7,238,596, 2007 - Google Patents
US7238596B2 - Method for preparing Ge1-x-ySnxEy (E=P, As, Sb) semiconductors and
related Si-Ge-Sn-E and Si-Ge-E analogs - Google Patents US7238596B2 - Method for …
related Si-Ge-Sn-E and Si-Ge-E analogs - Google Patents US7238596B2 - Method for …
Growth and applications of GeSn-related group-IV semiconductor materials
S Zaima, O Nakatsuka, N Taoka… - … and technology of …, 2015 - iopscience.iop.org
We review the technology of Ge 1− x Sn x-related group-IV semiconductor materials for
develo** Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …
develo** Si-based nanoelectronics. Ge 1− x Sn x-related materials provide novel …
Materials and optical devices based on group IV quantum wells grown on Si-Ge-Sn buffered silicon
US7582891B2 - Materials and optical devices based on group IV quantum wells grown on
Si-Ge-Sn buffered silicon - Google Patents US7582891B2 - Materials and optical devices …
Si-Ge-Sn buffered silicon - Google Patents US7582891B2 - Materials and optical devices …
Optical critical points of thin-film alloys: A comparative study
The E 0, E 0+ Δ 0, E 1, E 1+ Δ 1, E 0′, and E 2 optical transitions have been measured in
Ge 1− y Sn y alloys (y< 0.2) using spectroscopic ellipsometry and photoreflectance. The …
Ge 1− y Sn y alloys (y< 0.2) using spectroscopic ellipsometry and photoreflectance. The …
Tin-based group IV semiconductors: New platforms for opto-and microelectronics on silicon
▪ Abstract New classes of Sn-containing group IV semiconductors are described. Novel CVD
routes lead to growth of a broad range of Ge1− y Sn y alloys and compounds directly on Si …
routes lead to growth of a broad range of Ge1− y Sn y alloys and compounds directly on Si …