Progress in the room-temperature optical functions of semiconductors

AB Djurišić, Y Chan, EH Li - Materials Science and Engineering: R: Reports, 2002 - Elsevier
Optical functions of a specific semiconductor in a particular wavelength region are often
needed in optics and optoelectronics research. Basic optical properties of some materials …

[HTML][HTML] Optical constants and band gap of wurtzite Al1− xScxN/Al2O3 prepared by magnetron sputter epitaxy for scandium concentrations up to x= 0.41

M Baeumler, Y Lu, N Kurz, L Kirste… - Journal of Applied …, 2019 - pubs.aip.org
Wurtzite Al 1− x Sc x N thin films with scandium Sc concentrations up to x= 0.41 were
prepared by reactive pulsed DC magnetron co-sputtering at heater temperatures between …

Determination of the anisotropic dielectric function for wurtzite AlN and GaN by spectroscopic ellipsometry

S Shokhovets, R Goldhahn, G Gobsch… - Journal of Applied …, 2003 - pubs.aip.org
We demonstrate that variable angle spectroscopic ellipsometry (SE) is capable of
determining both ordinary and extraordinary dielectric functions (DFs) in the transparent …

Origin of brown coloration in diamond

LS Hounsome, R Jones, PM Martineau, D Fisher… - Physical Review B …, 2006 - APS
Measurements of the absorption spectra of brown natural type IIa diamond as well as brown
nitrogen-doped CVD diamond are reported. These are largely featureless and increase …

Isotopic effects in the phonon and electron dispersion relations of crystals

M Cardona - physica status solidi (b), 2000 - Wiley Online Library
During the past ten years, the relaxation of international tensions between East and West
has resulted in the so‐called “peace dividends”. Among these dividends, solid state …

Simple screened exact-exchange approach for excitonic properties in solids

Z Yang, F Sottile, CA Ullrich - Physical Review B, 2015 - APS
We present a screened exact-exchange (SXX) method for the efficient and accurate
calculation of the optical properties of solids, where the screening is achieved through the …

Anisotropic absorption and emission of bulk AlN

M Feneberg, MF Romero, M Röppischer, C Cobet… - Physical Review B …, 2013 - APS
The intrinsic anisotropic optical properties of wurtzite AlN are investigated in absorption and
emission. Full access to the anisotropy of the optical response of the hexagonal material is …

First-principles approach to closing the 10–100 eV gap for charge-carrier thermalization in semiconductors

DO Nielsen, CG Van de Walle, ST Pantelides… - Physical Review B, 2023 - APS
Since the 1960s and the first observations of radiation-induced disruption of electronic
devices in space, the study of the effects of ionizing radiation on electronics has grown into …

First-Principles Understanding on the Formation of Inversion Domain Boundaries of Wurtzite AlN, AlScN, and GaN

T Hwang, W Aigner, T Metzger… - ACS Applied …, 2024 - ACS Publications
Inversion domain boundaries (IDBs) are the major planar defect in piezoelectric wurtzite
structures such as AlN, AlScN, and GaN. The IDBs are often found in deposited thin films …

Quasiparticle bands and optical spectra of highly ionic crystals: AlN and NaCl

F Bechstedt, K Seino, PH Hahn, WG Schmidt - Physical Review B …, 2005 - APS
Based on the ab initio density functional theory we study the influence of many-body effects
on the quasiparticle (QP) band structures and optical absorption spectra of highly ionic …