Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices

MA Nawwar, MSA Ghazala, LMS El-Deen… - RSC …, 2022 - pubs.rsc.org
Heterostructures based on the GeSn nanocompound have high impact on integrated
photonics devices. The promising feature of GeSn nanostructures is its direct bandgap …

Strain engineering in optoelectronic properties of MoSi2N4 monolayer: ultrahigh tunability

H Alavi-Rad - Semiconductor Science and Technology, 2022 - iopscience.iop.org
Controllable optical properties are important for optoelectronic applications. Recently, the
two-dimensional MoSi 2 N 4 monolayer was successfully synthesized by chemical vapor …

Structural and electronic properties of hexagonal MXH (M= C, Si, Ge and Sn; X= N, P, As and Sb) monolayers: A first-principles prediction

A Rajabi-Maram, N Hasani, SB Touski - Physica E: Low-dimensional …, 2023 - Elsevier
In this work, a novel structure based on hydrogenation of group-IV and V has been
proposed. The hydrogen atom bonds to either of two elements at buckled hexagonal IV–V …

Strain engineering of electronic and spin properties in SnX (X= P, As, Sb, Bi) monolayers

N Hasani, A Rajabi-Maram, SB Touski - … of Physics and Chemistry of Solids, 2023 - Elsevier
In this study, the electronic and spin properties of SnX (X= P, As, Sb, Bi) monolayers under
biaxial strain were investigated using density functional theory. The electronic and spin …

Electronic properties of single vacancy defect in boron nitride nanoribbons with edge perturbation

MA Riyadi, Y Wong, SX Khoo, A Hamzah, NE Alias… - Plos one, 2024 - journals.plos.org
Two-dimensional material hexagonal boron nitride (h-BN), and its one-dimensional thin
strips, boron nitride nanoribbons (BNNRs) are electrically insulating with high thermal …

Anti-reflective MX (M= Sc and Y; X= N, P, As, Sb and Bi) monolayers: structural, electronic and optical study

SB Touski, M Hosseini, A Kokabi - Semiconductor Science and …, 2023 - iopscience.iop.org
In this paper, the structural, electronic and optical properties of tetragonal binary monolayers
of MX (M= Sc, Y; X= As, Bi, N, P, Sb) are investigated using the density functional theory. The …

SnSb monolayer: A promising 2D candidate for high sensitivity NO2 gas sensing

TV Vu, TH Ho, DQ Hoang, H Van Chi… - Materials Science in …, 2025 - Elsevier
Data regarding the adsorption-sensing characteristics of two-dimensional (2D) materials are
crucial for guiding their design and use in gas sensors. XSb (X= Si, Ge, Sn) are novel 2D …

Exploring topological phases in 2D half-hydrogenated PbBi materials

B Bentaibi, LB Drissi, EH Saidi, O Fassi-Fehri… - Materials Science in …, 2024 - Elsevier
We predict a new 2D topological insulator, namely the half hydrogenated PbBi-H monolayer,
with an intrinsic Dirac double cone using GGA corrected to Rashba spin splittings using HSE …

The structural, mechanical, electronic, and optical properties of monolayer and bilayer ABC3 (A Ga, In; B Si, Ge; CS, Se, Te)

A Rajabi-Maram, N Hasani, M Shalchian… - Materials Science in …, 2025 - Elsevier
This paper studies the structural, mechanical, optical, and electronic characteristics of
monolayer and bilayer ABC 3 (Adouble bondGa, In; Bdouble bondSi, Ge; Cdouble bondS …

Prediction of Band Inversion in Janus In2XYZ (X, Y, and Z= S, Se, Te) monolayers

A Rajabi-Maram, SB Touski, N Hasani… - Physical Chemistry …, 2024 - pubs.rsc.org
In this work, the electronic and spin characteristics of Janus In2X2Y and In2XYZ (X, Y, and
Z= S, Se, Te) monolayers are explored. The two sides of these Janus compounds have …