Semiconductor nanowhiskers: synthesis, properties, and applications

VG Dubrovskii, GE Cirlin, VM Ustinov - Semiconductors, 2009 - Springer
Recent results of studying the semiconductor's whisker nanocrystals are reviewed. Physical
grounds of growing whisker nanocrystals using the mechanism vapor-liquid-crystal are …

Advances in the theory of III–V nanowire growth dynamics

P Krogstrup, HI Jørgensen, E Johnson… - Journal of Physics D …, 2013 - iopscience.iop.org
Nanowire (NW) crystal growth via the vapour–liquid–solid mechanism is a complex dynamic
process involving interactions between many atoms of various thermodynamic states. With …

[ΒΙΒΛΙΟ][B] Nucleation theory and growth of nanostructures

VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …

Why does wurtzite form in nanowires of III-V zinc blende semiconductors?

F Glas, JC Harmand, G Patriarche - Physical review letters, 2007 - APS
We develop a nucleation-based model to explain the formation of the wurtzite phase during
the catalyzed growth of freestanding nanowires of zinc blende semiconductors. We show …

Growth kinetics and crystal structure of semiconductor nanowires

VG Dubrovskii, NV Sibirev, JC Harmand, F Glas - Physical Review B …, 2008 - APS
Theoretical model for the growth of semiconductor nanowires is developed, which enables
one to determine the growth conditions under which the formation of nanowires is possible …

Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment

VG Dubrovskii, GE Cirlin, IP Soshnikov, AA Tonkikh… - Physical Review B …, 2005 - APS
Mechanisms of nanowhisker formation during molecular beam epitaxy (MBE) are studied
theoretically within the frame of a kinetic model that accounts for the adatom diffusion from …

Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires

VG Dubrovskii, NV Sibirev, GE Cirlin, IP Soshnikov… - Physical Review B …, 2009 - APS
We present a general model for the vapor-liquid-solid nanowire (NW) growth rates which
accounts for adatom diffusion from the substrate and sidewalls into the Au catalyst drop as …

Synergetic nanowire growth

MT Borgström, G Immink, B Ketelaars, R Algra… - Nature …, 2007 - nature.com
Interest in nanowires continues to grow because they hold the promise of monolithic
integration of high-performance semiconductors with new functionality,,,, into existing silicon …

Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy

VG Dubrovskii, NV Sibirev, GE Cirlin, JC Harmand… - Physical Review E …, 2006 - APS
A theoretical model of nanowire formation by the vapor-liquid-solid mechanism during
molecular beam epitaxy and related growth techniques is presented. The model unifies the …

Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires

VG Dubrovskii, NV Sibirev - Physical Review B—Condensed Matter and …, 2008 - APS
Theoretical model for the growth thermodynamics of nanowires in different epitaxial
techniques is presented, which enables one to determine morphological and structural …