Semiconductor nanowhiskers: synthesis, properties, and applications
VG Dubrovskii, GE Cirlin, VM Ustinov - Semiconductors, 2009 - Springer
Recent results of studying the semiconductor's whisker nanocrystals are reviewed. Physical
grounds of growing whisker nanocrystals using the mechanism vapor-liquid-crystal are …
grounds of growing whisker nanocrystals using the mechanism vapor-liquid-crystal are …
Advances in the theory of III–V nanowire growth dynamics
P Krogstrup, HI Jørgensen, E Johnson… - Journal of Physics D …, 2013 - iopscience.iop.org
Nanowire (NW) crystal growth via the vapour–liquid–solid mechanism is a complex dynamic
process involving interactions between many atoms of various thermodynamic states. With …
process involving interactions between many atoms of various thermodynamic states. With …
[ΒΙΒΛΙΟ][B] Nucleation theory and growth of nanostructures
VG Dubrovskii - 2014 - Springer
Nucleation theory provides a powerful tool for growth modeling of a variety of objects: from
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
liquid droplets to thin solid films and biological structures. Theoretical approaches based on …
Why does wurtzite form in nanowires of III-V zinc blende semiconductors?
F Glas, JC Harmand, G Patriarche - Physical review letters, 2007 - APS
We develop a nucleation-based model to explain the formation of the wurtzite phase during
the catalyzed growth of freestanding nanowires of zinc blende semiconductors. We show …
the catalyzed growth of freestanding nanowires of zinc blende semiconductors. We show …
Growth kinetics and crystal structure of semiconductor nanowires
VG Dubrovskii, NV Sibirev, JC Harmand, F Glas - Physical Review B …, 2008 - APS
Theoretical model for the growth of semiconductor nanowires is developed, which enables
one to determine the growth conditions under which the formation of nanowires is possible …
one to determine the growth conditions under which the formation of nanowires is possible …
Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment
Mechanisms of nanowhisker formation during molecular beam epitaxy (MBE) are studied
theoretically within the frame of a kinetic model that accounts for the adatom diffusion from …
theoretically within the frame of a kinetic model that accounts for the adatom diffusion from …
Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires
VG Dubrovskii, NV Sibirev, GE Cirlin, IP Soshnikov… - Physical Review B …, 2009 - APS
We present a general model for the vapor-liquid-solid nanowire (NW) growth rates which
accounts for adatom diffusion from the substrate and sidewalls into the Au catalyst drop as …
accounts for adatom diffusion from the substrate and sidewalls into the Au catalyst drop as …
Synergetic nanowire growth
MT Borgström, G Immink, B Ketelaars, R Algra… - Nature …, 2007 - nature.com
Interest in nanowires continues to grow because they hold the promise of monolithic
integration of high-performance semiconductors with new functionality,,,, into existing silicon …
integration of high-performance semiconductors with new functionality,,,, into existing silicon …
Theoretical analysis of the vapor-liquid-solid mechanism of nanowire growth during molecular beam epitaxy
A theoretical model of nanowire formation by the vapor-liquid-solid mechanism during
molecular beam epitaxy and related growth techniques is presented. The model unifies the …
molecular beam epitaxy and related growth techniques is presented. The model unifies the …
Growth thermodynamics of nanowires and its application to polytypism of zinc blende III-V nanowires
VG Dubrovskii, NV Sibirev - Physical Review B—Condensed Matter and …, 2008 - APS
Theoretical model for the growth thermodynamics of nanowires in different epitaxial
techniques is presented, which enables one to determine morphological and structural …
techniques is presented, which enables one to determine morphological and structural …