Auger recombination in GaAs from first principles

D Steiauf, E Kioupakis, CG Van de Walle - Acs Photonics, 2014 - ACS Publications
Auger recombination is a significant loss mechanism in many optoelectronic devices. We
use first-principles methods based on density functional theory to study the relative …

The size dependent thermal diffusivity of water soluble CdTe quantum dots using dual beam thermal lens spectroscopy

TK Nideep, M Ramya, VPN Nampoori… - Physica E: Low …, 2020 - Elsevier
Size dependent thermal diffusivity of CdTe colloidal quantum dots samples has been
studied using dual beam thermal lens spectroscopy. The thermal diffusivity values of the …

Auger recombination in Si and GaAs semiconductors: Ab initio results

M Govoni, I Marri, S Ossicini - Physical Review B—Condensed Matter and …, 2011 - APS
A detailed description, at the atomistic scale, of the dynamics of excess electrons and holes
is fundamental in order to improve the performance of many optoelectronic devices. Among …

Photoacoustic thermal characterization of kaolinite clays

J Alexandre, F Saboya, BC Marques, MLP Ribeiro… - Analyst, 1999 - pubs.rsc.org
The usefulness of photoacoustic techniques in characterizing the thermal properties of
kaolinite clays, which are a very abundant mineral in some regions of Brazil, was …

[PDF][PDF] Escuchando la luz: breve historia y aplicaciones del efecto fotoacústico

E Marín - Latin-American Journal of Physics Education, 2008 - dialnet.unirioja.es
Se presentan cuestiones históricas relacionadas con el descubrimiento del efecto
fotoacústico, su interpretación y aplicaciones, con el animo de dar a conocer a profesores …

Optical properties and electronic structures of

SH Han, C Persson, FS Hasoon, HA Al-Thani… - Physical Review B …, 2006 - APS
Spectroscopic ellipsometric measurements of thin polycrystalline (4 Cu In Se 2) y (Cu In 5
Se 8) 1− y films reveal that there are important differences in optical properties and …

Accurate First-Principles Detailed-Balance Determination of Auger Recombination<? format?> and Impact Ionization Rates in Semiconductors

S Picozzi, R Asahi, CB Geller, AJ Freeman - Physical review letters, 2002 - APS
The technologically important prediction of Auger recombination lifetimes in semiconductors
is addressed by means of a fully first-principles formalism, based on precise energy bands …

Optical Properties of In2xGa2–2xO3 Nanowires Revealed by Photoacoustic Spectroscopy

SJ Zelewski, Z Zhou, F Li, X Kang, Y Meng… - … Applied Materials & …, 2019 - ACS Publications
Group III oxides, such as In2O3 and Ga2O3, have proved to be good candidates as active
materials for novel electronic devices, including high-mobility transistors, gas sensors, and …

Comment on photoconduction measurements of semiconductors: the effect of temperature rises

K Tanaka, N Yoshida - Journal of Materials Science: Materials in …, 2023 - Springer
Photoconductive methods have been widely employed for evaluating photo-electronic
responses in semiconductors, while those are likely to be affected by bolometric effects …

[HTML][HTML] Quantitative photothermal investigation of nonradiative recombination parameters in GaAs/InAs (QD)/GaAs quantum dot structures using a three-layer laser …

S Bouagila, S Ilahi, M Baira, A Mandelis… - Journal of Applied …, 2024 - pubs.aip.org
In this paper, we developed a theoretical model for the photothermal deflection technique in
order to investigate the electronic parameters of three-layer semiconductor structures. This …