Demonstration of controllable Si do** in N-polar AlN using plasma-assisted molecular beam epitaxy
In this study, we present the demonstration of controllable Si do** in N-polar AlN films
grown on single-crystal AlN substrates by plasma-assisted molecular beam epitaxy …
grown on single-crystal AlN substrates by plasma-assisted molecular beam epitaxy …
[HTML][HTML] Electrical and structural analysis of GaN/ZnO/Ga2O3 bonded interfaces; observation of spinel ZnGa2O4 after annealing
The process of wafer bonding β-Ga 2 O 3 and N-polar GaN with a ZnO “glue layer” was
optimized to reduce resistance at the bonded interface. The GaN/ZnO and Ga 2 O 3/ZnO …
optimized to reduce resistance at the bonded interface. The GaN/ZnO and Ga 2 O 3/ZnO …
Demonstration of Normally-Off N-Polar GaN Deep Recess HEMT
In this letter, we report the first normally-OFF N-polar GaN deep recess high electron mobility
transistor (HEMT). Utilizing atomic layer etching (ALE), followed by acid treatment, we …
transistor (HEMT). Utilizing atomic layer etching (ALE), followed by acid treatment, we …
Analyzing Ga-Polar and N-Polar GaN HEMTs: A Comparative Study for High-Power DC Performance in Semiconductor Applications
The performance of Ga-Polar and N-Polar Gallium Nitride High-Electron-Mobility Transistors
(HEMTs) in high-power direct current (DC) applications in the industry of semiconductor is …
(HEMTs) in high-power direct current (DC) applications in the industry of semiconductor is …
Growth and Characterization of Ultra-wide Bandgap III-N by Plasma-Assisted Molecular Beam Epitaxy
MI Khan - 2024 - deepblue.lib.umich.edu
N-type do** of ultra-wide bandgap aluminum nitride (AlN) is pivotal for electronic and
optoelectronic applications as it enhances the material's conductivity, enabling the …
optoelectronic applications as it enhances the material's conductivity, enabling the …