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Transistors based on two-dimensional materials for future integrated circuits
S Das, A Sebastian, E Pop, CJ McClellan… - Nature …, 2021 - nature.com
Field-effect transistors based on two-dimensional (2D) materials have the potential to be
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
used in very large-scale integration (VLSI) technology, but whether they can be used at the …
Promises and prospects of two-dimensional transistors
Abstract Two-dimensional (2D) semiconductors have attracted tremendous interest as
atomically thin channels that could facilitate continued transistor scaling. However, despite …
atomically thin channels that could facilitate continued transistor scaling. However, despite …
2D fin field-effect transistors integrated with epitaxial high-k gate oxide
C Tan, M Yu, J Tang, X Gao, Y Yin, Y Zhang, J Wang… - Nature, 2023 - nature.com
Precise integration of two-dimensional (2D) semiconductors and high-dielectric-constant (k)
gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for …
gate oxides into three-dimensional (3D) vertical-architecture arrays holds promise for …
The roadmap of 2D materials and devices toward chips
A Liu, X Zhang, Z Liu, Y Li, X Peng, X Li, Y Qin, C Hu… - Nano-Micro Letters, 2024 - Springer
Due to the constraints imposed by physical effects and performance degradation, silicon-
based chip technology is facing certain limitations in sustaining the advancement of Moore's …
based chip technology is facing certain limitations in sustaining the advancement of Moore's …
The road for 2D semiconductors in the silicon age
Continued reduction in transistor size can improve the performance of silicon integrated
circuits (ICs). However, as Moore's law approaches physical limits, high‐performance …
circuits (ICs). However, as Moore's law approaches physical limits, high‐performance …
Sub-10 nm two-dimensional transistors: Theory and experiment
Presently Si-based field-effect transistors (FETs) are approaching their physical limit, and
further scaling their gate length down to the sub-10 nm region is becoming extremely …
further scaling their gate length down to the sub-10 nm region is becoming extremely …
Emerging 2D memory devices for in‐memory computing
L Yin, R Cheng, Y Wen, C Liu, J He - Advanced Materials, 2021 - Wiley Online Library
It is predicted that the conventional von Neumann computing architecture cannot meet the
demands of future data‐intensive computing applications due to the bottleneck between the …
demands of future data‐intensive computing applications due to the bottleneck between the …
The trend of 2D transistors toward integrated circuits: scaling down and new mechanisms
Abstract 2D transition metal chalcogenide (TMDC) materials, such as MoS2, have recently
attracted considerable research interest in the context of their use in ultrascaled devices …
attracted considerable research interest in the context of their use in ultrascaled devices …
Large-Area Epitaxial Growth of Transition Metal Dichalcogenides
Over the past decade, research on atomically thin two-dimensional (2D) transition metal
dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high …
dichalcogenides (TMDs) has expanded rapidly due to their unique properties such as high …
Anti‐ambipolar heterojunctions: materials, devices, and circuits
Anti‐ambipolar heterojunctions are vital in constructing high‐frequency oscillators, fast
switches, and multivalued logic (MVL) devices, which hold promising potential for next …
switches, and multivalued logic (MVL) devices, which hold promising potential for next …