Removal compositions and processes for removing at least one material layer from a
rejected microelectronic device structure having same thereon. The removal composition …

5,976,928 A 5,993,685 A 6,065,424 A 6,194,366 B1 6,211,126 B1 6,224,785 B1 6,280,651
B1 6,306,807 B1 6,322,600 B1 6,323,168 B1 6,344,432 B1 6,346,741 B1 6,395,194 B1 …

Compositions useful for the selective removal of titanium nitride and/or photoresist etch
residue materials relative to metal conducting, eg, tungsten, and insulating materials from a …

5, 665, 168 A 9/1997 Nakano et al. 5, 705, 089 A 1/1998 Sugihara et al. 5, 803, 956 A
9/1998 Ohmi et al. 5, 855, 735 A 1/1999 Takada et al. 5, 976, 928 A 11/1999 Kirlin et al. 5 …

The present invention relates to chemical mechani cal polishing compositions and process
for the polishing of microelectronic device substrates having copper and barrier layer …

A chemical mechanical polishing process including a single copper removal CMP slurry
formulation for planarization of a microelectronic device structure preferably having copper …

Compositions useful for the selective removal of titanium nitride and/or photoresist etch
residue materials relative to insulating materials from a microelectronic device having same …

Polishing compositions and methods for removing conduc tive materials and barrier
materials from a substrate surface are provided. Polishing compositions are provided for …

This invention relates to a slurry for CMP (Chemical Mechanical Polishing), in particular to a
slurry for CMP, which is adapted to be employed for forming a damascene wiring consisting …

Processes for recycling electronic components removed from printed wire boards, whereby
precious metals and base metals are extracted from the electronic components using …