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An aging-resistant RO-PUF for reliable key generation
Physical unclonable functions (PUFs) have emerged as a promising security primitive for
low-cost authentication and cryptographic key generation. However, PUF stability with …
low-cost authentication and cryptographic key generation. However, PUF stability with …
[КНИГА][B] Analog IC reliability in nanometer CMOS
E Maricau, G Gielen - 2013 - books.google.com
This book focuses on modeling, simulation and analysis of analog circuit aging. First, all
important nanometer CMOS physical effects resulting in circuit unreliability are reviewed …
important nanometer CMOS physical effects resulting in circuit unreliability are reviewed …
Parameter variation tolerance and error resiliency: New design paradigm for the nanoscale era
Variations in process parameters affect the operation of integrated circuits (ICs) and pose a
significant threat to the continued scaling of transistor dimensions. Such parameter …
significant threat to the continued scaling of transistor dimensions. Such parameter …
Adaptive techniques for overcoming performance degradation due to aging in digital circuits
SV Kumar, CH Kim… - 2009 Asia and South …, 2009 - ieeexplore.ieee.org
Negative bias temperature instability (NBTI) in PMOS transistors has become a major
reliability concern in present-day digital circuit design. Further, with the recent usage of Hf …
reliability concern in present-day digital circuit design. Further, with the recent usage of Hf …
Adaptive techniques for overcoming performance degradation due to aging in CMOS circuits
SV Kumar, CH Kim… - IEEE Transactions on Very …, 2009 - ieeexplore.ieee.org
Negative bias temperature instability (NBTI) in pMOS transistors has become a major
reliability concern in present-day digital circuit design. Further, with the recent introduction of …
reliability concern in present-day digital circuit design. Further, with the recent introduction of …
On recoverable behavior of PBTI in AlGaN/GaN MOS-HEMT
This experimental study focuses on the positive bias temperature instability (PBTI) in a fully
recessed-gate AlGaN/GaN MOS-HEMT. A positive stress voltage to the gate results in …
recessed-gate AlGaN/GaN MOS-HEMT. A positive stress voltage to the gate results in …
Impact of aging on the reliability of delay PUFs
Abstract Physically Unclonable Functions (PUFs) are mainly used for generating unique
keys to identify electronic devices. These entities mainly benefit from the process variations …
keys to identify electronic devices. These entities mainly benefit from the process variations …
Exploring the effect of device aging on static power analysis attacks
Vulnerability of cryptographic devices to side-channel analysis attacks, and in particular
power analysis attacks has been extensively studied in the recent years. Among them, static …
power analysis attacks has been extensively studied in the recent years. Among them, static …
Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics
In this paper, complementary measurements of the drain and the gate low-frequency noise
are used as a powerful probe for sensing the hafnium-related defects in nMOSFETs with …
are used as a powerful probe for sensing the hafnium-related defects in nMOSFETs with …
Reliability of Reconfigurable Field Effect Transistors: Early Analysis of Bias Temperature Instability
Bias temperature instability is a common relia-bility issue in Metal Oxide Semiconductor
Field Effect Transistors used in silicon integrated circuits. When transferred to in-dustrial …
Field Effect Transistors used in silicon integrated circuits. When transferred to in-dustrial …