The commercial success of radio-frequency acoustic filters in wireless communication
systems has launched aluminum nitride (AlN) as one of the most widely used …

We summarize the recipes and describe the role of sputtering parameters in producing
highly c-axis Aluminum Nitride (AlN) films for piezoelectric applications. The information is …

In this paper, an AlN/free-standing nanocrystalline diamond (NCD) system is proposed in
order to process high frequency surface acoustic wave (SAW) resonators for sensing …

Aluminium nitride (AlN) films were deposited by dc magnetron sputtering (dcMS) and high
power impulse magnetron sputtering (HiPIMS) on (100) oriented silicon (Si) substrates, in Ar …

A plasma enhanced atomic layer deposition (PEALD) process has been used to deposit
crystalline AlN thin films at 250° C using nitrogen 5% hydrogen plasma and …

We show that AlN-based piezocapacitors with relatively high piezoelectric coefficient (d 33)
values (3–4 pC/N) can be fabricated on polyimide (PI) substrates at 160 C or even at room …

The deposition temperature dependence of the crystal structure and ferroelectricity for Sc‐
doped AlN [(Al0. 78Sc0. 22) N] films is investigated.(Al0. 78Sc0. 22) N films 120–190 nm …

Abstract a-axis-oriented AlN (100) films are identified as promising candidates for surface
acoustic wave devices owing to their high transversal-acoustic velocity. Achieving uniform …

Plasma-enhanced atomic layer deposition was employed to grow aluminum nitride (AlN)
thin films on Si (100), Si (111), and c-plane sapphire substrates at 250° C …

AlN thin films were deposited on c-, a-and r-plane sapphire substrates by the magnetron
sputtering technique. The influence of high-temperature thermal annealing (HTTA) on the …